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Massachusetts Institute of Technology

GeSi photodetectors and electro-absorption modulators for Si electronic-photonic integrated circuits

Abstract

dc:description.abstract

The silicon electronic-photonic integrated circuit (EPIC) has emerged as a promising technology to break through the interconnect bottlenecks in telecommunications and on-chip interconnects. High performance photonic modulators and photodetectors compatible with Si complimentary metal oxide semiconductor (CMOS) devices are indispensable to achieve this goal. A photonic modulator generates optical "1" and "0" signals by switching the light on and off, while a photodetector converts the optical signals to electrical ones so that they can be processed by a CMOS circuit. Due to its compatibility with Si CMOS processing and adequate optoelectric properties, epitaxial GeSi material has been considered as a promising candidate to achieve this goal. This thesis investigates epitaxial GeSi photodetectors and electro-absorption (EA) modulators integrated with high index contrast Si(core)/Si02(cladding) waveguides to form an EPIC circuit on a Si platform with CMOS compatibility. Tensile strain is introduced into the GeSi material to enhance its optoelectronic properties. The effect of tensile strain on the band structure of Ge is systematically studied, and the deformation potential constants of Ge are derived from the experimental results with relatively high accuracy.

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
2007

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Liu, Jifeng, Ph. D. Massachusetts Institute of Technology
Advisor dc:contributor.advisor
  • Lionel C. Kimerling.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
eng

Identifiers

dc:identifier.*
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/38582

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Liu, Jifeng, Ph. D. Massachusetts Institute of Technology. GeSi photodetectors and electro-absorption modulators for Si electronic-photonic integrated circuits. Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/38582