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Showing 1 to 9 of 9 for “"CMOS processing"”.

  1. Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies.

    … replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals …

    unt Repository record for Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies. (opens in a new tab)

  2. GeSi photodetectors and electro-absorption modulators for Si electronic-photonic integrated circuits

    … with Si complimentary metal oxide semiconductor (CMOS) devices are indispensable to achieve this goal. A photonic modulator generates optical "1" and "0" signals by switching the light on and off, while a photodetector converts the optical signals to electrical ones so that they can be processed …

    mit Repository record for GeSi photodetectors and electro-absorption modulators for Si electronic-photonic integrated circuits (opens in a new tab)

  3. Carbon nanotube synthesis for integrated circuit interconnects

    … positions, at temperatures compatible with CMOS processing (below 500"C), and with the appropriate electrical connections, remain challenges that are hindering their introduction into industry. The purpose of this study was to develop the processes and understanding needed to establish CNTs …

    mit Repository record for Carbon nanotube synthesis for integrated circuit interconnects (opens in a new tab)

  4. Strained SiGe-channel p-MOSFETs : impact of heterostructure design and process technology

    Conventional Si CMOS intrinsic device performance has improved by 17% per year over the last 30 years through scaling of the gate length of the MOSFET along with process innovations such as the super-steep retrograde channel doping and ultra shallow source-drain junctions. In order to continue …

    mit Repository record for Strained SiGe-channel p-MOSFETs : impact of heterostructure design and process technology (opens in a new tab)

  5. BiCMOS technology and some applications in high performance arithmetic structures.

    This work provides a treatment of BiCMOS technology from several perspectives. The manner in which the modern BiCMOS process evolved from a predominantly CMOS processing base is discussed, and a survey of special processing technologies is given. Without these advanced techniques the current level …

    windsor Repository record for BiCMOS technology and some applications in high performance arithmetic structures. (opens in a new tab)

  6. Gated multi-cycle integration (GMCI) for focal plane array (FPA) applications

    … was designed and fabricated with HP-0.5gm CMOS processing to demonstrate the feasibility of GMCI. The primary experimental results showed that the minimum detectable signal could be 5 orders less than the background, which is impossible for the conventional readout methods employed by …

    njit Repository record for Gated multi-cycle integration (GMCI) for focal plane array (FPA) applications (opens in a new tab)

  7. An integrated heterodyne interferometer with on-chip detectors and modulators

    The application of CMOS processing techniques developed in the microelectronics world to that of silicon photonics has been the catalyst for the rapid proliferation of smaller, higher performance, and more densely integrated photonic devices that are rapidly advancing the field with large-scale …

    mit Repository record for An integrated heterodyne interferometer with on-chip detectors and modulators (opens in a new tab)

  8. Low Energy Ion Beam Synthesis of Si Nanocrystals for Nonvolatile Memories - Modeling and Process Simulations

    … Si NCs can be fabricated along with standard CMOS processing. The optimization of the location and size of ion beam synthesized Si NCs requires a deeper understanding of the mechanisms involved, which determine (i) the built-up of Si supersaturation by high-fluence ion implantation and (ii) NC …

    qucosa-diss

  9. Analysis, design, fabrication, and testing of a MEMS switch for power applications

    … and power, its compatibility with mainstream CMOS processing technologies, and its good thermal performance. Pneumatic actuation is used as a secondary tool for the validation of diaphragm integrity. The mechanical analysis of axisymmetric thin plates is studied and two diaphragm designs are …

    mit Repository record for Analysis, design, fabrication, and testing of a MEMS switch for power applications (opens in a new tab)