High-quality InP on GaAs

In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, more expensive, and utilize older fabrication equipment than GaAs. High-quality InP on GaAs may also serve as a step towards bringing high-quality InP onto the Si platform. Integrating high-quality InP onto bulk GaAs has proven to be challenging, however. While a number of commercial Molecular Beam Epitaxy (MBE) growth foundries offer InP on GaAs for M-HEMT (Metamorphic High-Electron-Mobility Transistor) applications, the successful demonstration of InP-based, minority-carrier devices on bulk GaAs remains elusive. In this work InP on GaAs suitable for minority carrier devices is demonstrated exhibiting a threading dislocation density of 1.2x1 06/cm2 determined by plan-view transmission electron microscopy. To further quantify the quality of this InP on GaAs, a photoluminescence (PL) structure was grown to compare the quality to bulk InP. Comparable room and low (20K) temperature PL was attained. (The intensity from the PL structure grown on the InP on GaAs was -70% of that on bulk InP at both temperatures.)

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2006

Author dc:creator

• Quitoriano, Nathaniel Joseph

Advisor dc:contributor.advisor

• Eugene A. Fitzgerald.

• Materials Science and Engineering.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/37370

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/37370