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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 227 for “"InP"”.
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Integrated Inp Photonic Switches
… functions to be lowered into the optical layer. InP-based switches are particularly attractive because of their small size, low electrical power consumption, and compatibility with integration of laser sources, photo-detectors, and electronic components. In this dissertation the development of …
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Turning InP nanocrystals up to 11: Coinage Metal Cation Exchange in InP Nanocrystals
… of coinage metal (Cu, Ag, Au) cations in InP nanomaterials. Chapter 1 will provide an introduction to core concepts and background related to quantum dots, clusters, and dopant-dependent properties. In chapter 2, we will discuss the development of a new methodology to dope InP quantum dots …
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Hydrogen degradation on InP HEMTs
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
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High-quality InP on GaAs
… telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, more expensive, and utilize older fabrication equipment than GaAs. High-quality InP on GaAs may also …
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Investigation of transport mechanisms for n-p-n InP/InGaAs/InP double heterojunction bipolar transistors
A more complete model for InP/InGaAs Double Heterojunction Bipolar Transistors (DHBT) is obtained in this thesis by physically analyzing the transport process of the main current components. The potential distribution of the energy barrier constitutes a fundamental analytical concept and is …
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Signal generation for millimeter wave and THz applications in InP-DHBT and InP-on-BiCMOS technologies
… signal sources in Transferred Substrate (TS) InP-DHBT technology and successful wafer-level circuit integration in InP-on-BiCMOS technology. It is divided in three major parts. In the first part, it presents 96 GHz and 197 GHz fundamental sources using a 0.8 µm InP TS-DHBT process, which …
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Power limiting mechanisms in InP HEMTs
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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The development of InP-based optoelectronic devices
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
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MBE-grown long wavelength InGaAlAs/InP laser diodes
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
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The hydrogen-induced piezoelectric effect in InP HEMTs
… piezoelectric effect on the threshold voltage of InP HEMTs was developed using 2D finite element simulations to calculate the mechanical stress caused by a Ti-containing gate that has expanded due to hydrogen absorption. A simple electrostatics model was used to calculate the impact of this …
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InAlAs/InGaAs/InP HEMTs with pseudomorphic Schottky barriers
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
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Integrated spot size converters for InP based photonic systems
… a polarization filter mechanism. A reproducible InP process guideline is developed that achieves vertical waveguides with smooth sidewalls. Birefringence and resonant coupling are used in an ATG to enable a polarization filtering and splitting mechanism. For the first time such a filter is …
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Defect engineering of InP and InGaAs for optoelectronic applications
InP and InGaAs lattice matched to InP hold a special place in the optoelectronics industry because of their room temperature bandgaps of 1.27 and 0.73 e V; these translate into emission/ detection wavelengths of - 0.9 and 1.6 μm As such, they are ideal for the development of long wavelength …
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Defect engineering of InP and InGaAs for optoelectronic applications
InP and InGaAs lattice matched to InP hold a special place in the optoelectronics industry because of their room temperature bandgaps of 1.27 and 0.73 e V; these translate into emission/ detection wavelengths of - 0.9 and 1.6 μm As such, they are ideal for the development of long wavelength …
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Optical study of InP related semiconductor alloys;spectroscopic ellipsometry
… to the formation of a spontaneous (111) InP/GaP superlattice. We also studied the effect of misfit strain on the E1 critical point parameters of 1 ~m thick InxGal-xP/GaAs (0.4~~0.6) as a function of In composition. We observed near cancellation of In composition dependence of the E1 peak …
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Surface roughness anisotopy on mismatched InAlAs/InGaAs/InP heterostructures
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
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High fidelity pattern transfer in InP photonic device fabrication
… neither are viable optical options for InP production.[2] The purpose of this thesis is to develop a fabrication process for InP Faraday rotators using standard, high throughput lithographic and etching techniques. The Faraday rotator is a 1.4 Jim InP-InGaAsP-InP waveguide with a line …
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Dynamics of the kink effect in InAlAs/InGaAs/InP HEMTs
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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Wavelength conversion by four wave mixing in passive InGaAsP/InP waveguides
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
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The electrical and optical characterization of the InGaAs/InP alloy system
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1981.
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