Face-up chemical mechanical polishing : kinematics and material removal rate

A working prototype face-up CMP tool has successfully been completed. Experiments conducted on the face-up CMP machine qualitatively correspond with the theoretical polishing model. Discrepancies in data from the theoretical model could potentially be caused by non-uniform loading of the polishing pad and uneven distribution of slurry over the pad due to the edge effects on fluid flow. Despite the discrepancies, experimental data suggest that the theoretical model used to describe blanket wafer polishing by the face-up CMP tool is at least partially valid.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Mechanical Engineering.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2006

Author dc:creator

• Shieh, Marvin Bryan

Advisor dc:contributor.advisor

• Jung-Hoon Chun and Nannaji Saka.

• Mechanical Engineering.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/36701

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/36701