Advanced engineered substrates for the integration of lattice-mismatched materials with silicon

The dramatic advances in Si/SiO2-based microelectronic processing witnessed over the past several decades can largely be attributed to relatively material-independent device scaling. However, with physical and economic limitations to the continued scaling of such devices appearing on the horizon, it is likely that near-term advances will come from the integration of novel and previously underrepresented materials. One of the most promising ways to enhance performance comes from the integration of judiciously chosen lattice-mismatched materials with Si. However, the integration of such structures typically poses significant technical challenges. The work contained in this thesis seeks to address several of these important issues, primarily through the use of relaxed, graded SiGe buffers on Si (i.e. Vx[Si1-xGex]/Si). Several new phenomena in relaxed graded SiGe buffers are developed in this thesis. A rise in threading dislocation density was observed in high-Ge content relaxed graded SiGe layers grown at relatively high temperatures, which was attributed to dislocation nucleation. This observation is contrary to conventional graded buffer theory in which high growth temperatures are expected to result in reduced threading dislocation densities (TDDs).

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2006

Author dc:creator

• Isaacson, David Michael, 1976-

Advisor dc:contributor.advisor

• Eugene A. Fitzgerald.

• Materials Science and Engineering.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/36214

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/36214