The design of a high efficiency RF power amplifier for an MCM process

In this thesis, I addressed issues arising in the design of a high efficiency RF power amplifier for the Draper Laboratory multi-chip module (MCM) process. A design for a 2.3 GHz PCB amplifier using an enhancement-mode pHEMT device that achieves 68.9% PAE at 30 dBm output power is presented. Analysis of heat management, die connection parasitics, and transmission line structures in the context of the MCM process is performed to show that a similar design could realistically be adapted to the MCM process with possible performance enhancement.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2005

Author dc:creator

• Noonan, James (James Keating)

Advisor dc:contributor.advisor

• Doug White and Joel Dawson.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/32103

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/32103