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Massachusetts Institute of Technology
Non-stationary transport effects in deep sub-micron channel Si mosfets
Abstract
dc:descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineeing, 1989.
Degree
thesis:*- Department dc:contributor.department
- Massachusetts Institute of Technology. Department of Electrical Engineering
- Grantor dc:publisher
- Massachusetts Institute of Technology
- Year dc:date.issued
- 1989
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Shahidi, Ghavam Ghavami
- Advisor dc:contributor.advisor
-
- Dimitri A. Antoniadis and Henry I. Smith.
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
- Licence dc:rights.uri
- Language dc:language.iso
- eng
Identifiers
dc:identifier.*- Handle dc:identifier.uri
- http://hdl.handle.net/1721.1/13831
- OAI identifier oai:identifier
- oai:dspace.mit.edu:1721.1/13831