Remote epitaxy of III-N membranes on amorphous boron nitride

Amorphous boron nitride (aBN) has found broad applications in industrial applications. Thick aBN has been thoroughly investigated¹,², including the recent revisiting of this material at nanometer thickness. However, most investigations of aBN so far have been based on three-dimensional structures. In this thesis, Molecular-Beam Epitaxy (MBE) grown monolayer aBN in two-dimensional structure is demonstrated. In-situ gallium nitride (GaN) remote epitaxy is finished on the transparent monolayer aBN. By doing the in-situ remote epitaxy, contaminations are avoided, and epitaxial membrane quality is improved. Multi-stacking technique is developed to further enhance the manufacturing efficiency of the free-standing GaN film. Surface acoustic wave (SAW) strain sensor fabricated by free-standing ultrathin single crystalline GaN film shows good performances. Process to solve GaN device heat dissipation is presented. Relaxed InGaN film grown on aBN monolayer provides a new research direction for GaN based red LED.

Name thesis:degree_name

Master

Department dc:contributor.department

Massachusetts Institute of Technology. Department of Mechanical Engineering

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2021

Author dc:creator

• Liu, Yunpeng(Mechanical engineer)Massachusetts Institute of Technology.

Advisor dc:contributor.advisor

• Jeehwan Kim.

• Mechanical Engineering.

Statement dc:rights

• MIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

https://hdl.handle.net/1721.1/130861

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/130861