{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/130861"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/130861","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Remote epitaxy of III-N membranes on amorphous boron nitride","abstract":"Amorphous boron nitride (aBN) has found broad applications in industrial applications. Thick aBN has been thoroughly investigated¹,², including the recent revisiting of this material at nanometer thickness. However, most investigations of aBN so far have been based on three-dimensional structures. In this thesis, Molecular-Beam Epitaxy (MBE) grown monolayer aBN in two-dimensional structure is demonstrated. In-situ gallium nitride (GaN) remote epitaxy is finished on the transparent monolayer aBN. By doing the in-situ remote epitaxy, contaminations are avoided, and epitaxial membrane quality is improved. Multi-stacking technique is developed to further enhance the manufacturing efficiency of the free-standing GaN film. Surface acoustic wave (SAW) strain sensor fabricated by free-standing ultrathin single crystalline GaN film shows good performances. Process to solve GaN device heat dissipation is presented. Relaxed InGaN film grown on aBN monolayer provides a new research direction for GaN based red LED.","abstract_html":"Amorphous boron nitride (aBN) has found broad applications in industrial applications. Thick aBN has been thoroughly investigated¹,², including the recent revisiting of this material at nanometer thickness. However, most investigations of aBN so far have been based on three-dimensional structures. In this thesis, Molecular-Beam Epitaxy (MBE) grown monolayer aBN in two-dimensional structure is demonstrated. In-situ gallium nitride (GaN) remote epitaxy is finished on the transparent monolayer aBN. By doing the in-situ remote epitaxy, contaminations are avoided, and epitaxial membrane quality is improved. Multi-stacking technique is developed to further enhance the manufacturing efficiency of the free-standing GaN film. Surface acoustic wave (SAW) strain sensor fabricated by free-standing ultrathin single crystalline GaN film shows good performances. Process to solve GaN device heat dissipation is presented. Relaxed InGaN film grown on aBN monolayer provides a new research direction for GaN based red LED.","abstract_has_math":false,"creators":["Liu, Yunpeng(Mechanical engineer)Massachusetts Institute of Technology."],"institution":"Massachusetts Institute of Technology","degree_name":"Master","degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. 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However, most investigations of aBN so far have been based on three-dimensional structures. In this thesis, Molecular-Beam Epitaxy (MBE) grown monolayer aBN in two-dimensional structure is demonstrated. In-situ gallium nitride (GaN) remote epitaxy is finished on the transparent monolayer aBN. By doing the in-situ remote epitaxy, contaminations are avoided, and epitaxial membrane quality is improved. Multi-stacking technique is developed to further enhance the manufacturing efficiency of the free-standing GaN film. Surface acoustic wave (SAW) strain sensor fabricated by free-standing ultrathin single crystalline GaN film shows good performances. Process to solve GaN device heat dissipation is presented. Relaxed InGaN film grown on aBN monolayer provides a new research direction for GaN based red LED."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["S.M."]},{"key":"dc:title","label":"Title","values":["Remote epitaxy of III-N membranes on amorphous boron nitride"]}]}],"canonical_facts":{"dc:contributor.advisor":["Jeehwan Kim."],"dc:contributor.department":["Massachusetts Institute of Technology. Department of Mechanical Engineering","MechE"],"dc:contributor.other":["Massachusetts Institute of Technology. Department of Mechanical Engineering."],"dc:creator":["Liu, Yunpeng(Mechanical engineer)Massachusetts Institute of Technology."],"dc:date.accessioned":["2021-05-25T18:23:30Z"],"dc:date.available":["2021-05-25T18:23:30Z"],"dc:date.issued":["2021"],"dc:description":["Thesis: S.M., Massachusetts Institute of Technology, Department of Mechanical Engineering, February, 2021","Cataloged from the official PDF version of thesis.","Includes bibliographical references (pages 35-37)."],"dc:description.abstract":["Amorphous boron nitride (aBN) has found broad applications in industrial applications. Thick aBN has been thoroughly investigated¹,², including the recent revisiting of this material at nanometer thickness. However, most investigations of aBN so far have been based on three-dimensional structures. In this thesis, Molecular-Beam Epitaxy (MBE) grown monolayer aBN in two-dimensional structure is demonstrated. In-situ gallium nitride (GaN) remote epitaxy is finished on the transparent monolayer aBN. By doing the in-situ remote epitaxy, contaminations are avoided, and epitaxial membrane quality is improved. Multi-stacking technique is developed to further enhance the manufacturing efficiency of the free-standing GaN film. Surface acoustic wave (SAW) strain sensor fabricated by free-standing ultrathin single crystalline GaN film shows good performances. Process to solve GaN device heat dissipation is presented. Relaxed InGaN film grown on aBN monolayer provides a new research direction for GaN based red LED."],"dc:description.degree":["S.M."],"dc:identifier.uri":["https://hdl.handle.net/1721.1/130861"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["MIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided."],"dc:rights.uri":["http://dspace.mit.edu/handle/1721.1/7582"],"dc:subject":["Mechanical Engineering."],"dc:title":["Remote epitaxy of III-N membranes on amorphous boron nitride"],"dc:type":["Thesis"],"thesis:degree_name":["Master"]},"updated_at":"2026-07-22T22:22:03Z"}