Tunneling and ferroelectric based transistors for energy efficient electronics

Si CMOS technology is approaching its limit to meet the demand for future data-intensive energy efficient ubiquitous electronics. Emerging materials (i.e. low dimensional nanomaterials, novel dielectric/ferroelectric materials) show great promise to overcome the limits of the Si CMOS technology for specific applications. This thesis studies the prospects of two different emerging materials system (the atomically thin two-dimensional materials and ferroelectric oxides) in energy efficient electronic devices for future Systems-on-a-Chip (SoC's) applications. As the channel length of transistors has shrunk over the years, short-channel effects have become a major limiting factor to transistor miniaturization. Atomically thin MoS₂ is an ideal semiconductor material for field-effect transistors (FETs) with sub-10-nm channel lengths.

Name thesis:degree_name

Doctoral

Department dc:contributor.department

Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2019

Author dc:creator

• Zubair, Ahmad,Ph.D.Massachusetts Institute of Technology.

Advisor dc:contributor.advisor

• Tomás Palacios.

• Electrical Engineering and Computer Science.

Statement dc:rights

• MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

https://hdl.handle.net/1721.1/122744

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/122744