Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 34 for “"Short-channel Effects"”.
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Highly Scaled p-GaN-gate HEMTs for Low Voltage Power Electronics
… structure was developed with considerations for short channel effects. A self-aligned, gate-first process employing tungsten metallization was implemented to enable gate lengths as small as 100 nm. Device scaling was studied systematically, revealing the importance of gate aspect ratio and …
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Tunneling and ferroelectric based transistors for energy efficient electronics
… Systems-on-a-Chip (SoC's) applications. As the channel length of transistors has shrunk over the years, short-channel effects have become a major limiting factor to transistor miniaturization. Atomically thin MoS₂ is an ideal semiconductor material for field-effect transistors (FETs) with …
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A new inverse-modeling-based technique for sub-100-nm MOSFET characterization
… the fabrication process, strongly determine the short channel effects, which ultimately limit device operation and performance. In order to suppress short-channel effects, extensive use of non-uniform doping profiles are found in modem devices. Among these are the super-steep retrograde (SSR) …
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Experimental Study and Modeling of the GM-I Dependence of Long-Channel Mosfets
… and ALD1107 show sufficiently pronounced ‘short-channel’ effects to render the ACM inadequate. As a byproduct of this effort, we confirmed the modified ACM equation. With an m factor of approximately 0.6, it captures the I-gm dependence with sub-28% maximum error and sub-10% average error. …
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Design of CMOS Four-Quadrant Gilbert Cell Multiplier Circuits in Weak and Moderate Inversion
… current components and to address higher order effects such as ideality factor mismatch, threshold mismatch, body effect, and short channel effects, is important to provide a linear multiplier. It is also shown that distortion caused by device size mismatch and offset input currents can be used …
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Monte Carlo study of current variability in UTB SOI DG MOSFETs
… difficult into the nanometer regime due to short channel effects, tunneling and subthreshold leakage current. Ultra-thin body silicon-on-insulator based architectures offer a promising alternative, alleviating these problems through their geometry. However, the transport behaviour in these …
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Field-effect transistors on monolayer transition metal dichalcogenides synthesized by chemical vapor deposition
… superb transport properties and resistance to short channel effects, especially if a single sheet is isolated (monolayer). One family of 2DMs, known as transition metal dichalcogenides (TMDCs), are particularly useful as channel material in transistor devices due to their often-semiconducting …
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Device and circuit-level models for carbon nanotube and graphene nanoribbon transistors
… through the investigation that CNT and GNR channels can overcome the limitations imposed by Si channel length scaling and associated short channel effects while consuming smaller channel area at higher current density.
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Investigation of the electron transport and electrostatics of nanoscale strained Si/Si/Ge heterostructure MOSFETs
… of 1.7-2X has been demonstrated for long-channel n-type devices. The electron mobility enhancement observed for long channel length devices may not be the same for devices with nanoscale gate length. In particular, increased channel doping, which is required to control short-channel …
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Material and device aspects of semiconducting two-dimensional crystals
… mobilities, and enable devices with immunity to short channel effects in addition to compatibility with silicon CMOS processes.^ In this thesis, the fundamental device implications of using semiconducting 2D crystals are investigated. This includes: 1) the optimization of device fabrication …
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Static random-access memory designs based on different FinFET at lower technology node (7nm)
… to utilize emerging technologies to overcome short-channel effects (SCE) of conventional CMOS. FinFET devices are promising emerging devices that can be utilized to improve the performance of SRAM designs at lower technology nodes. In this thesis, I present detail analysis of SRAM cells using …
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FUNDAMENTAL ISSUE IN SPACE ELECTRONICS RELIABILITY: NEGATIVE BIAS TEMPERATURE INSTABILITY
… we have discovered that \uf044Vth(t) on p-channel field effect transistors with HfSiON gate dielectrics is dependent upon the magnitude of Vds during the stressing cycle. To our knowledge this is not anticipated by any prior modeling attempts. We justify the exclusion of short channel …
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Band Engineering of Advanced Materials for Semiconductor Devices
… transistors (MOSFETs) continues, the short-channel effects (SCEs) and contact resistance severely degrade device performance. It is crucial to understand the physics at various interfacial regions of MOSFETs to provide guidance for overcoming these limitations. In this thesis, the …
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Characterization of Dopant Diffusion in Bulk and lower dimensional Silicon Structures
… and a half to two years. Beyond 2011, when the channel length of the Metal Oxide Field effect transistor (MOSFET) approaches 16 nm, the scaling of the planar MOSFET is predicted to reach its limit. Consequently, a departure from the current planar MOSFET on bulk silicon substrate is required to …
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A comparison of electrical performance analysis between nanoscale double-gate and gate-all-around nanowire mosfet
… scaled down, several problems arise such as the short-channel effect, excessive transistor gate leakage and power consumption. The purpose of this simulation work is to compare the performance of Double-Gate and Gate-All-Around and study the effect of scaling physical dimension on devices …
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Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications
… characteristics, the adoption of alternate channel materials with low bandgap with superior transport properties will play a crucial role to improve the computation ability of the standard integrated circuit (IC). The requirement of high-mobility channel materials allows the industry to …
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A ballistic transport model for HEMTs and III-V MOSFETs
… model will only become more accurate as channel lengths are scaled down to 10 nm. We would like to investigate to what extent this is true in III-V MOSFETs, and also to study the impact of short channel effects and other parasitics inherent to a III-V design. To accomplish these goals, we …
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Reliability of W-Band InAIN/GaN High Electron Mobility Transistors
… down the gate length. Maintaining acceptable short-channel effects requires shrinking the barrier thickness at the same time. However, a limitation exists since there is a minimum barrier thickness that is needed to obtain a sufficiently high two-dimensional electron gas density. One possible …
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