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Massachusetts Institute of Technology
Modeling of electron transport in sub-100 nm channel length silicon MOSFETs
Abstract
dc:descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
Degree
thesis:*- Department dc:contributor.department
- Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science
- Grantor dc:publisher
- Massachusetts Institute of Technology
- Year dc:date.issued
- 1995
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Jacobs, Jarvis Benjamin
- Advisor dc:contributor.advisor
-
- Dimitri Antoniadis
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
- Licence dc:rights.uri
- Language dc:language.iso
- eng
Identifiers
dc:identifier.*- Handle dc:identifier.uri
- http://hdl.handle.net/1721.1/11414
- OAI identifier oai:identifier
- oai:dspace.mit.edu:1721.1/11414