An investigation into the use of group VI elements as dopants in III-V materials prepared by molecular beam epitaxy

An electrochemical cell Pt/Ag/AgI/Ag2X/Pt (X=S,Se) has been used as a highly controllable source of S2 or Se2 molecules for n-type doping of GaAs and Ga1As grown by Molecular Beam Epitaxy (MBE). This source produces a pure oeam ot chalcogen dimers at low temperature (200-300°C) and is simply programmed by an applied emf. The response time of the cell is of the order of one second enabling complicated doping profiles to be achieved.

Name dc:type.qualificationname

phd

Level dc:type.qualificationlevel

doctoral

Grantor dc:publisher.institution

City of London Polytechnic

Year dc:date.issued

1987

Author dc:creator

• Andrews, David Arthur

• 530 Physics

Dc Identifier Grantnumber

N/A

OAI identifier oai:identifier

oai:repository.londonmet.ac.uk:3129