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This source produces a pure oeam ot chalcogen dimers at low temperature (200-300°C) and is simply programmed by an applied emf. The response time of the cell is of the order of one second enabling complicated doping profiles to be achieved."]},{"key":"dc:format","label":"Dc Format","values":["text"]},{"key":"dc:title","label":"Title","values":["An investigation into the use of group VI elements as dopants in III-V materials prepared by molecular beam epitaxy"]}]}],"canonical_facts":{"dc:contributor.sponsor":["London Metropolitan University"],"dc:creator":["Andrews, David Arthur"],"dc:date":["1987-04"],"dc:date.issued":["1987-04"],"dc:description.abstract":["An electrochemical cell Pt/Ag/AgI/Ag2X/Pt (X=S,Se) has been used as a highly controllable source of S2 or Se2 molecules for n-type doping of GaAs and Ga1As grown by Molecular Beam Epitaxy (MBE). This source produces a pure oeam ot chalcogen dimers at low temperature (200-300°C) and is simply programmed by an applied emf. 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