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Kyoto University

Study on Carrier Trapping and Scattering Toward Modeling of SiC MOSFETs

dc:creator Chi, Xilun

dc:date.issued2025

Abstract

dc:description

付記する学位プログラム名: 京都大学卓越大学院プログラム「先端光・電子デバイス創成学」

Degree

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Grantor dc:publisher: Kyoto University
Year dc:date.issued: 2025

Author and committee

dc:creator, dc:contributor.*

Author dc:creator: Chi, Xilun

Subjects

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Rights

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Statement dc:rights: 許諾条件により本文は2026-09-20に公開
Language dc:language.iso: eng

Identifiers

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Handle dc:identifier.uri: http://hdl.handle.net/2433/298252
OAI identifier oai:identifier: oai:repository.kulib.kyoto-u.ac.jp:2433/298252

Chain of custody

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Harvested from: Kyoto University
Base URL: repository.kulib.kyoto-u.ac.jp/server/oai/request
Last updated: 2026-07-24
Source record: OAI-PMH GetRecord

related terms

citation

Chi, Xilun. Study on Carrier Trapping and Scattering Toward Modeling of SiC MOSFETs. Kyoto University, 2025. http://hdl.handle.net/2433/298252

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