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Showing 1 to 6 of 6 for “"Silicon-Carbide MOSFETs"”.
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On the Design of a High-Power Medium-Voltage Converter for Transportation Applications
… the voltage ratings of commercialized silicon-carbide MOSFETs are below the levels projected for medium-voltage applications. Thus, research into more advanced converter topologies, such as multi-level converters, using wide-bandgap devices is necessary to support the required voltage …
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Circuits and Modulation Schemes to Achieve High Power-Density in SiC Grid-connected Converters
The emergence of silicon-carbide (SiC) devices has been a 'game changer' in the field of power electronics. With desirable material properties such as low-loss characteristics, high blocking voltage, and high junction temperature operation, they are expected to drastically increase the power …
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Investigating Impact of Emerging Medium-Voltage SiC MOSFETs on Medium-Voltage High-Power Applications
For decades, the Silicon-based semiconductors have been the solution for power electronics applications. However, these semiconductors have approached their limits of operation in blocking voltage, working temperature and switching frequency. Due to material superiority, the relatively-new …
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Study on Carrier Trapping and Scattering Toward Modeling of SiC MOSFETs
付記する学位プログラム名: 京都大学卓越大学院プログラム「先端光・電子デバイス創成学」
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Study on Channel Mobility and Threshold Voltage Towards SiC CMOS Devices
付記する学位プログラム名: 京都大学卓越大学院プログラム「先端光・電子デバイス創成学」
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Active Source Management to Maintain High Efficiency in Resonant Conversion over Wide Load Range
… a dc input voltage, two input inductors, and two MOSFETs. The topology is termed as a boost amplifier. If the amplifier operates away from the synchronous frequency, detrimental current spikes will flow though the switches since the series diodes are eliminated. Current spikes reduce the …