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Kyoto University
Interface Charge Engineering in AlGaN/GaN Heterostructures for GaN Power Devices
Degree
thesis:*- Grantor dc:publisher
- Kyoto University
- Year dc:date.issued
- 2019
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Nakazawa, Satoshi
- Advisors dc:contributor.advisor
-
- 木本, 恒暢
- 川上, 養一
- 杉山, 和彦
Subjects
dc:subject × 5Rights
dc:rights- Statement dc:rights
-
- 学位規則第9条第2項により要約公開
- 許諾条件により要約は2020-09-23に公開
- Language dc:language.iso
- eng
Identifiers
dc:identifier.*- Handle dc:identifier.uri
- http://hdl.handle.net/2433/244553
- OAI identifier oai:identifier
- oai:repository.kulib.kyoto-u.ac.jp:2433/244553