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Showing 1 to 20 of 67 for “"AlGaN/GaN"”.
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AlGaN/GaN-based power semiconductor switches
AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and charge density. The ability to grow these devices on large-diameter Si wafers …
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AlGaN/GaN heterostructures for enhancement mode transistors
… a larga banda, come il nitruro di gallio (GaN) e le relative leghe, hanno mostrato eccellenti proprietà fisiche. Un aspetto interessante legato al GaN è la possibilità di crescere eterostrutture AlGaN/GaN, in cui si forma un gas bidimensionale di elettroni (2DEG). Basandosi sulla …
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AlGaN/GaN HFET with composite 'slow/fast' gate
<p>The remarkable properties of AlGaN/GaN heterojunction field effect transistors (HFET) include a record high-density two dimensional electron gas (2DEG) channel, high breakdown fields, temperature stability and chemical robustness. Radio Frequency (RF) switches based on such HFETs demonstrate …
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Processing technology for high quality AlGaN/GaN MOSHEMT interfaces
Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) are very promising for applications requiring high power and high operating frequencies due to its intrinsic material properties like the high electron mobility, large critical electric field and large carrier concentration. For …
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Self-aligned AlGaN/GaN transistors for sub-mm wave applications
… work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source and drain access resistance. The eventual fabrication of self-aligned transistors required …
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Fabrication and characterization of advanced ALGaN/GaN high-electron-mobility transistors
… to enhance the electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Chapter 2 reports the development of in situ vacuum anneal and SiH4 or SiH4+NH3 passivation to realize high quality metal gate/high-k dielectric stacks on GaN …
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Process Development and Characterization of AlGaN/GaN Heterostructure Field-Effect Transistors
The fabrication of AlGaN/GaN HFETs entailed first developing fundamental processing techniques such as isolation etching, low-resistance drain/source ohmic contacts, and Schottky gate formation. These efforts along with related processing issues will be discussed. Devices were then fabricated on …
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Substrate Impurity Incorporation Mitigation for Improved AlGaN/GaN-ON-Si RF Performance
… detrimental as it is capacitively coupled to the GaN HEMT 2DEG channel. Moreover, the presence of significant lattice mismatch and thermal mismatch between the AlN nucleation layer and Si leads to a very large threading dislocation density (TDD) within the AlN layer thereby creating a leakage …
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Thermal Performance of AlGaN/GaN Based Power Switching Devices for Transformerless Inverters
… like Silicon Carbide (SiC), Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) have superior material properties as compared to Silicon (Si) like higher electrical breakdown voltages and bandgap energies as well as lower leakage currents as compared to Si which make them ideal to …
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Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors
Gallium Nitride (GaN) belongs to a class of materials called wide band-gap semiconductors. In recent years, the versatile nature of this material has been exploited for a wide range of applications from solid state lighting to RF and microwave communication, as well as high power switching. The …
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Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs
AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high power and high frequency applications. However, the poor long term …
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AlGaN/GaN Dual Channel HFETs and Realization of GaN Devices on different substrates
GaN-based HFETs demonstrate ubiquitous high power and high frequency performance and attract tremendous research efforts. Even though significant advances have been achieved, there still exist some critical issues needed to be investigated and solved. In particular, high defect densities due to …
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Advanced process development for contacts to algan/gan high electron mobility transistors (HEMTS)
… studied as Schottky metallizations to GaN and AlGaN/GaN heterostructures. Ni/Au, Ni/Pt/Au, Ir/Au, Ir/Pt/Au and Pt/Au Schottky diodes were fabricated on GaN and AlGaN/GaN substrates. Schottky barrier heights ranging from 0.8 to 0.9 eV were obtained as-deposited on GaN with ideality …
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Polymer-Supported Bridges for Multi-Finger AlGaN/GaN Heterojunction Field Effect Transistors (HFETs)
Current AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) make use of multiple sources, drains, and gates in parallel to maximize transconductance and effective gain while minimizing the current density through each channel. To connect the sources to a common ground, current practice …
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Crecimiento y fabricación de transistores HEMT de AlGaN/GaN por epitaxia de haces moleculares
Los semiconductores de nitruro de galio (GaN) y sus aleaciones (AlGaN, InGaN) han surgido en la última década como uno de los materiales más prometedores en el campo de los transistores de efecto campo para aplicaciones de alta potencia y alta temperatura. Su principal atractivo radica en la …
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Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors
… and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for high frequency applications. In spite of their excellent material properties, GaN-based HEMTs are still below the theoretical predictions in their high frequency performance. If the frequency …
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Fabricación, caracterización y modelado de transistores de heterounión de efecto campo basados en AlGaN/GaN
… los semiconductores de gap ancho (SiC, Diamante, GaN) los hace muy atractivos como potenciales candidatos para las aplicaciones de alta potencia y alta temperatura. El SiC es uno de los semiconductores de gap ancho que fue inicialmente estudiado, sobre todo para aplicaciones de alto voltaje …
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Espejos de Bragg de AlGaN/GaN crecidos por epitaxia de haces moleculares para dispositivos optoelectrónicos de cavidad resonante
… en la fabricación de espejos de Bragg basados en AlGaN/GaN que presenten propiedades estructurales y ópticas adecuadas para formar parte de estructuras de cavidad resonante, tales como diodos electroluminiscentes y fotodetectores. Una vez que se ha seleccionado la estructura de espejo que presenta …
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Atomic layer deposition Al2O3-passivated AlGaN/GaN high-electron-mobility transistors on Si(111) towards reliable high-speed electronics
(Al)GaN-based transistors are the backbones of next-generation high power/frequency electronics. However, various challenges with this exciting technology still necessitate more comprehensive investigations. In particular, epitaxially growing high-quality (Al)GaN layers on foreign substrates, …
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