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Iowa State University

Pulsed laser ablation and micromachining of 4H and 6H SiC wafers for high-temperature MEMS sensors

Abstract

dc:description.abstract

<p>This thesis provides a scientific investigation of the ablation behavior of single crystal 4H-SiC and 6H-SiC to improve the manufacturability and high-temperature performance of SiC based MEMS pressure sensors using laser applications. The ablation characteristics of both the polytypes were studied using pulsed lasers and micromachining results were presented. The study shows the possibility of these devices capable of operating in harsh environments.</p>

Degree

thesis:*
Name thesis:degree_name
Master of Science
Level thesis:degree_level
thesis
Department dc:contributor.department
Department of Mechanical Engineering
Year dc:date.issued
2008

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Gupta, Saurabh
Advisor dc:contributor.advisor
  • Palaniappa A. Molian

Rights

Language dc:language.iso
en

Identifiers

dc:identifier.*
Identifier
archive/lib.dr.iastate.edu/etd/10866/
OAI identifier oai:identifier
oai:dr.lib.iastate.edu:20.500.12876/25072

Chain of custody

source
Harvested from
Iowa State University
Base URL
dr.lib.iastate.edu/server/oai/request
Last updated
2026-07-24
Source record
OAI-PMH GetRecord
related terms
citation

Gupta, Saurabh. Pulsed laser ablation and micromachining of 4H and 6H SiC wafers for high-temperature MEMS sensors. thesis thesis, 2008. https://dr.lib.iastate.edu/handle/20.500.12876/25072