ΦΑΙΝΟΜΕΝΑ ΜΕΤΑΦΟΡΑΣ ΑΜΟΡΦΩΝ ΗΜΙΑΓΩΓΩΝ

IN THIS STUDY TRANSPORT PROPERTIES SUCH AS D.C. DARK CONDUCTIVITY, THERMOPOWER,PHOTOCONDUCTIVITY, CPM ADOPTICAL ABSORPTION WERE APPLIED TO SPUTTERED AMORPHOUS GE SE BIX AND AMORPHOUS HYDROGENATED SILICON A-SI:H FILMS FROM GLOW DISCHARGE. IT WAS FOUND THAT ADDITION OF 15,6 AT % BI LEADS TO AN INCREASE OF TEN ORDERSOF MAGNITUDE IN ELECTRICAL CONDUCTIVITY AS WELL AS A DECREASE IN THE OPTICAL GAPS. A NEGATIVE SIGN OF THE THERMOPOWER WAS OBSERVED FOR X>10, INDICATING THAT THE CONDUCTION TYPE CHANGED FROM P-TYPE (LOW X) TO N-TYPE. FROM XPS RESULTS IT WAS FOUND THAT BI IS INTRODUCED AS A POSITIVE CHANGED CENTRE. THE RESULTS ARE INTERPRETED AS THE EFFECT OF THE SHIFT OF THE FERMI LEVEL CLOSER TO THE CONDUCTION BOUND DUE TO THE INCORPORATION OF POSITIVE U DEFECTS THAT UNPIN THE FERMI ENERGY. IT WAS ALSO FABRICATED A P-N JUNCTION CASE BEHAVIOR THAT IS EXPECTED FOR LOW CONDUCTIVITY AMORPHOUS SEMICONDUCTORS. VALUES OF DRIFT MOBILITY HAVE BEEN OBTAINED FROM THE STEADY STATE AND TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS. THEABOVE TECHNIQUES WERE ALSO USED TO CHARACTERISE FILMS OF GLOW DISCHARGE A-SI:HDEPOSITED UNDER DIFFERENT PREPARATION CONDITIONS.

Grantor dc:publisher

University of Patras

Year dc:date

1991

Author dc:creator

• Κουνάβης, Παναγιώτης

• P.C. ΗΛΕΚΤΡΙΚΗ ΑΓΩΓΙΜΟΤΗΤΑ ΣΚΟΤΟΥΣ
• ΑΜΟΡΦΟ ΥΔΡΟΓΟΝΟΠΟΙΗΜΕΝΟ ΠΥΡΙΤΙΟ
• Άμορφοι ημιαγωγοί
• ΕΠΑΦΗ Ρ-Ν
• Ευκινησία
• ΗΜΙΑΓΩΓΟΙ ΑΠΟΚΑΤΑΣΤΑΣΗΣ
• ΘΕΡΜΟΤΑΣΗ
• ΟΠΤΙΚΗ ΑΠΟΡΡΟΦΗΣΗ
• Φωτοαγωγιμότητα
• ΧΑΛΚΟΓΕΝΗ ΥΛΙΚΑ
• Amorphous semiconductors
• AMORPHOUSHYDROGENATED SILICON
• Chalcogenides
• DRIFT MOBILITY
• OPTICAL ABSORPTION
• P-N JUNCTION
• P.C. ELECTRICAL CONDUCTIVITY
• Photoconductivity
• RELAXATION SEMICONDUCTORS
• Thermopower
• Φυσικές Επιστήμες
• Φυσική
• Natural Sciences
• Physical Sciences

Language dc:language

gre

Identifier

10.12681/eadd/1680

OAI identifier oai:identifier

oai:10442/1680