{"id":{"repo_id":"greece","oai_identifier":"oai:10442/1680"},"canonical_url":"https://search.dev.ndltd.org/etd/greece/oai:10442/1680","repository":{"repo_id":"greece","name":"Greek National Archive of PhD Theses","base_url":"https://phdtheses.ekt.gr/eadd_oai/request"},"display":{"title":"ΦΑΙΝΟΜΕΝΑ ΜΕΤΑΦΟΡΑΣ ΑΜΟΡΦΩΝ ΗΜΙΑΓΩΓΩΝ","abstract":"IN THIS STUDY TRANSPORT PROPERTIES SUCH AS D.C. DARK CONDUCTIVITY, THERMOPOWER,PHOTOCONDUCTIVITY, CPM ADOPTICAL ABSORPTION WERE APPLIED TO SPUTTERED AMORPHOUS GE SE BIX AND AMORPHOUS HYDROGENATED SILICON A-SI:H FILMS FROM GLOW DISCHARGE. IT WAS FOUND THAT ADDITION OF 15,6 AT % BI LEADS TO AN INCREASE OF TEN ORDERSOF MAGNITUDE IN ELECTRICAL CONDUCTIVITY AS WELL AS A DECREASE IN THE OPTICAL GAPS. A NEGATIVE SIGN OF THE THERMOPOWER WAS OBSERVED FOR X>10, INDICATING THAT THE CONDUCTION TYPE CHANGED FROM P-TYPE (LOW X) TO N-TYPE. FROM XPS RESULTS IT WAS FOUND THAT BI IS INTRODUCED AS A POSITIVE CHANGED CENTRE. THE RESULTS ARE INTERPRETED AS THE EFFECT OF THE SHIFT OF THE FERMI LEVEL CLOSER TO THE CONDUCTION BOUND DUE TO THE INCORPORATION OF POSITIVE U DEFECTS THAT UNPIN THE FERMI ENERGY. IT WAS ALSO FABRICATED A P-N JUNCTION CASE BEHAVIOR THAT IS EXPECTED FOR LOW CONDUCTIVITY AMORPHOUS SEMICONDUCTORS. VALUES OF DRIFT MOBILITY HAVE BEEN OBTAINED FROM THE STEADY STATE AND TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS. THEABOVE TECHNIQUES WERE ALSO USED TO CHARACTERISE FILMS OF GLOW DISCHARGE A-SI:HDEPOSITED UNDER DIFFERENT PREPARATION CONDITIONS.","abstract_html":"IN THIS STUDY TRANSPORT PROPERTIES SUCH AS D.C. DARK CONDUCTIVITY, THERMOPOWER,PHOTOCONDUCTIVITY, CPM ADOPTICAL ABSORPTION WERE APPLIED TO SPUTTERED AMORPHOUS GE SE BIX AND AMORPHOUS HYDROGENATED SILICON A-SI:H FILMS FROM GLOW DISCHARGE. IT WAS FOUND THAT ADDITION OF 15,6 AT % BI LEADS TO AN INCREASE OF TEN ORDERSOF MAGNITUDE IN ELECTRICAL CONDUCTIVITY AS WELL AS A DECREASE IN THE OPTICAL GAPS. A NEGATIVE SIGN OF THE THERMOPOWER WAS OBSERVED FOR X>10, INDICATING THAT THE CONDUCTION TYPE CHANGED FROM P-TYPE (LOW X) TO N-TYPE. FROM XPS RESULTS IT WAS FOUND THAT BI IS INTRODUCED AS A POSITIVE CHANGED CENTRE. THE RESULTS ARE INTERPRETED AS THE EFFECT OF THE SHIFT OF THE FERMI LEVEL CLOSER TO THE CONDUCTION BOUND DUE TO THE INCORPORATION OF POSITIVE U DEFECTS THAT UNPIN THE FERMI ENERGY. IT WAS ALSO FABRICATED A P-N JUNCTION CASE BEHAVIOR THAT IS EXPECTED FOR LOW CONDUCTIVITY AMORPHOUS SEMICONDUCTORS. VALUES OF DRIFT MOBILITY HAVE BEEN OBTAINED FROM THE STEADY STATE AND TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS. THEABOVE TECHNIQUES WERE ALSO USED TO CHARACTERISE FILMS OF GLOW DISCHARGE A-SI:HDEPOSITED UNDER DIFFERENT PREPARATION CONDITIONS.","abstract_has_math":false,"creators":["Κουνάβης, Παναγιώτης"],"institution":"University of Patras","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":1991,"date_issued":"1991","date_published":"1991","updated_at":"2026-07-24T02:25:05Z","subjects":["P.C. ΗΛΕΚΤΡΙΚΗ ΑΓΩΓΙΜΟΤΗΤΑ ΣΚΟΤΟΥΣ","ΑΜΟΡΦΟ ΥΔΡΟΓΟΝΟΠΟΙΗΜΕΝΟ ΠΥΡΙΤΙΟ","Άμορφοι ημιαγωγοί","ΕΠΑΦΗ Ρ-Ν","Ευκινησία","ΗΜΙΑΓΩΓΟΙ ΑΠΟΚΑΤΑΣΤΑΣΗΣ","ΘΕΡΜΟΤΑΣΗ","ΟΠΤΙΚΗ ΑΠΟΡΡΟΦΗΣΗ","Φωτοαγωγιμότητα","ΧΑΛΚΟΓΕΝΗ ΥΛΙΚΑ","Amorphous semiconductors","AMORPHOUSHYDROGENATED SILICON","Chalcogenides","DRIFT MOBILITY","OPTICAL ABSORPTION","P-N JUNCTION","P.C. ELECTRICAL CONDUCTIVITY","Photoconductivity","RELAXATION SEMICONDUCTORS","Thermopower","Φυσικές Επιστήμες","Φυσική","Natural Sciences","Physical Sciences"],"languages":["gre"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["10.12681/eadd/1680"],"render_values":[{"text":"10.12681/eadd/1680","href":"https://doi.org/10.12681/eadd/1680","code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/10442/hedi/1680","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Κουνάβης, Παναγιώτης"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["1991"]},{"key":"dc:publisher","label":"Institution","values":["University of Patras","Πανεπιστήμιο Πατρών"]},{"key":"dc:type","label":"Dc Type","values":["PhD Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["P.C. ΗΛΕΚΤΡΙΚΗ ΑΓΩΓΙΜΟΤΗΤΑ ΣΚΟΤΟΥΣ","ΑΜΟΡΦΟ ΥΔΡΟΓΟΝΟΠΟΙΗΜΕΝΟ ΠΥΡΙΤΙΟ","Άμορφοι ημιαγωγοί","ΕΠΑΦΗ Ρ-Ν","Ευκινησία","ΗΜΙΑΓΩΓΟΙ ΑΠΟΚΑΤΑΣΤΑΣΗΣ","ΘΕΡΜΟΤΑΣΗ","ΟΠΤΙΚΗ ΑΠΟΡΡΟΦΗΣΗ","Φωτοαγωγιμότητα","ΧΑΛΚΟΓΕΝΗ ΥΛΙΚΑ","Amorphous semiconductors","AMORPHOUSHYDROGENATED SILICON","Chalcogenides","DRIFT MOBILITY","OPTICAL ABSORPTION","P-N JUNCTION","P.C. ELECTRICAL CONDUCTIVITY","Photoconductivity","RELAXATION SEMICONDUCTORS","Thermopower","Φυσικές Επιστήμες","Φυσική","Natural Sciences","Physical Sciences"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["gre"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["10.12681/eadd/1680","http://hdl.handle.net/10442/hedi/1680"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["IN THIS STUDY TRANSPORT PROPERTIES SUCH AS D.C. DARK CONDUCTIVITY, THERMOPOWER,PHOTOCONDUCTIVITY, CPM ADOPTICAL ABSORPTION WERE APPLIED TO SPUTTERED AMORPHOUS GE SE BIX AND AMORPHOUS HYDROGENATED SILICON A-SI:H FILMS FROM GLOW DISCHARGE. IT WAS FOUND THAT ADDITION OF 15,6 AT % BI LEADS TO AN INCREASE OF TEN ORDERSOF MAGNITUDE IN ELECTRICAL CONDUCTIVITY AS WELL AS A DECREASE IN THE OPTICAL GAPS. A NEGATIVE SIGN OF THE THERMOPOWER WAS OBSERVED FOR X>10, INDICATING THAT THE CONDUCTION TYPE CHANGED FROM P-TYPE (LOW X) TO N-TYPE. FROM XPS RESULTS IT WAS FOUND THAT BI IS INTRODUCED AS A POSITIVE CHANGED CENTRE. THE RESULTS ARE INTERPRETED AS THE EFFECT OF THE SHIFT OF THE FERMI LEVEL CLOSER TO THE CONDUCTION BOUND DUE TO THE INCORPORATION OF POSITIVE U DEFECTS THAT UNPIN THE FERMI ENERGY. IT WAS ALSO FABRICATED A P-N JUNCTION CASE BEHAVIOR THAT IS EXPECTED FOR LOW CONDUCTIVITY AMORPHOUS SEMICONDUCTORS. VALUES OF DRIFT MOBILITY HAVE BEEN OBTAINED FROM THE STEADY STATE AND TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS. THEABOVE TECHNIQUES WERE ALSO USED TO CHARACTERISE FILMS OF GLOW DISCHARGE A-SI:HDEPOSITED UNDER DIFFERENT PREPARATION CONDITIONS.","Σ'ΑΥΤΗ ΤΗΝ ΕΡΓΑΣΙΑ ΕΦΑΡΜΟΣΤΗΚΑΝ ΔΙΑΦΟΡΕΣ ΤΕΧΝΙΚΕΣ ΓΙΑ ΤΗΝ ΜΕΛΕΤΗ ΦΑΙΝΟΜΕΝΩΝ ΜΕΤΑΦΟΡΑΣ ΟΠΩΣ Η D.C. ΑΓΩΓΙΜΟΤΗΤΑ ΣΚΟΤΟΥΣ, ΘΕΡΜΟΤΑΣΗ, ΦΩΤΟΑΓΩΓΙΜΟΤΗΤΑ, ΟΠΤΙΚΗ ΑΠΟΡΡΟΦΗΣΗ ΚΑΙ Η CPM ΜΕΘΟΔΟΣ ΣΕ ΑΜΟΡΦΑ FILM ΑΠΟ SPUTTERING GE SE BIX ΚΑΙ ΣΕ ΥΔΡΟΓΟΝΟΜΕΝΟ ΠΥΡΙΤΙΟ A-SI:H ΠΑΡΑΣΚΕΥΑΣΜΕΝΟ ΜΕ ΤΗ ΜΕΘΟΔΟ ΤΗΣ ΕΚΚΕΝΩΣΗΣ ΑΙΓΛΗΣ (GLAR DISCHARGE) . ΒΡΕΘΗΚΕ ΠΩΣ Η ΠΡΟΣΘΗΚΗ 15% ΒΙ ΠΡΟΚΑΛΕΙ ΜΙΑ ΑΥΞΗΣΗ ΤΟΥ ΜΕΓΕΘΟΥΣ ΤΗΣ ΑΓΩΓΙΜΟΤΗΤΑΣ ΣΚΟΤΟΥΣ ΜΕΧΡΙ 10 ΤΑΞΕΩΣ ΜΕΓΕΘΟΥΣ ΚΑΘΩΣ ΕΠΙΣΗΣ ΚΑΙ ΜΙΑ ΜΕΙΩΣΗ ΣΤΟ ΟΠΤΙΚΟ ΧΑΣΜΑ. Η ΘΕΡΜΟΗΛΕΚΤΡΙΚΗ ΤΑΣΗ ΒΡΕΘΗΚΕ ΑΡΝΗΤΙΚΗ ΓΙΑ Χ>10, ΥΠΟΔΕΙΚΝΥΟΝΤΑΣ ΠΩΣ Ο ΤΥΠΟΣ ΤΗΣ ΑΓΩΓΙΜΟΤΗΤΑΣ ΑΛΛΑΞΕ ΑΠΟ Ρ-ΤΥΠΟΥ (ΜΙΚΡΑ Χ) ΣΕ Ν-ΤΥΠΟΥ. ΑΠΟ ΑΠΟΤΕΛΕΣΜΑΤΑ XPS ΒΡΕΘΗΚΕ ΠΩΣ ΤΟ ΒΙ ΕΙΣΑΓΕΤΑΙ ΣΑΝ ΘΕΤΙΚΑ ΦΟΡΤΙΣΜΕΝΟ ΚΕΝΤΡΟ. ΤΑ ΑΠΟΤΕΛΕΣΜΑΤΑ ΕΡΜΗΝΕΥΘΗΚΑΝ ΜΕ ΤΗΝ ΜΕΤΑΚΙΝΗΣΗ ΤΗΣ ΣΤΑΘΜΗΣ FERMI ΠΡΟΣ ΤΗΝ ΖΩΝΗ ΑΓΩΓΙΜΟΤΗΤΑΣ ΕΞΑΙΤΙΑΣ ΤΗΣ ΕΙΣΑΓΩΓΗΣ ΑΤΕΛΕΙΩΝ ΜΕ ΘΕΤΙΚΗ ΕΝΕΡΓΕΙΑ ΣΥΣΧΕΤΙΣΗΣ. ΕΠΙΣΗΣ ΚΑΤΑΣΚΕΥΑΣΤΗΚΕ Ρ.Ν ΕΠΑΦΗΣ ΑΠΟ ΑΥΤΑ ΤΑ ΥΛΙΚΑ. ΟΙ I-V ΧΑΡΑΚΤΗΡΙΣΤΙΚΕΣ ΠΑΡΟΥΣΙΑΖΟΥΝ ΤΗ ΣΥΜΠΕΡΙΦΟΡΑ ΤΩΝ ΗΜΙΑΓΩΓΩΝ ΑΠΟΚΑΤΑΣΤΑΣΗΣ ΟΠΩΣ ΑΝΑΜΕΝΕΤΑΙ ΣΕ ΑΜΟΡΦΟΥΣ ΗΜΙΑΓΩΓΟΥΣ ΜΙΚΡΗΣ ΑΓΩΓΙΜΟΤΗΤΑΣ. ΕΓΙΝΑΝ, ΥΠΟΛΟΓΙΣΜΟΙ ΤΗΣ ΕΥΚΙΝΗΣΙΑΣ ΟΛΙΣΘΗΣΗΣ ΑΠΟ ΜΕΤΡΗΣΕΙΣ ΑΓΩΓΙΜΟΤΗΤΑΣ ΣΤΑΘΕΡΟΥ ΦΩΤΙΣΜΟΥ ΚΑΙ ΑΠΟ ΜΕΤΑΒΑΤΙΚΗ ΦΩΤΟΑΓΩΓΙΜΟΤΗΤΑ. ΟΙ ΠΑΡΑΠΑΝΩ ΤΕΧΝΙΚΕΣ ΧΡΗΣΙΜΟΠΟΙΗΘΗΚΑΝ ΕΠΙΣΗΣ ΓΙΑ ΝΑ ΧΑΡΑΚΤΗΡΙΣΤΟΥΝ FILMS A-SI:H ΤΑ ΟΠΟΙΑ ΕΝΑΠΟΤΕΘΗΚΑΝ ΚΑΤΩ ΑΠΟ ΔΙΑΦΟΡΕΤΙΚΕΣ ΣΥΝΘΗΚΕΣ ΠΑΡΑΣΚΕΥΗΣ."]},{"key":"dc:title","label":"Title","values":["ΦΑΙΝΟΜΕΝΑ ΜΕΤΑΦΟΡΑΣ ΑΜΟΡΦΩΝ ΗΜΙΑΓΩΓΩΝ","TRANSPORT PROPERTIES OF AMORPHOUS SEMICONDUCTORS"]}]}],"canonical_facts":{"dc:creator":["Κουνάβης, Παναγιώτης"],"dc:date":["1991"],"dc:description":["IN THIS STUDY TRANSPORT PROPERTIES SUCH AS D.C. DARK CONDUCTIVITY, THERMOPOWER,PHOTOCONDUCTIVITY, CPM ADOPTICAL ABSORPTION WERE APPLIED TO SPUTTERED AMORPHOUS GE SE BIX AND AMORPHOUS HYDROGENATED SILICON A-SI:H FILMS FROM GLOW DISCHARGE. IT WAS FOUND THAT ADDITION OF 15,6 AT % BI LEADS TO AN INCREASE OF TEN ORDERSOF MAGNITUDE IN ELECTRICAL CONDUCTIVITY AS WELL AS A DECREASE IN THE OPTICAL GAPS. A NEGATIVE SIGN OF THE THERMOPOWER WAS OBSERVED FOR X>10, INDICATING THAT THE CONDUCTION TYPE CHANGED FROM P-TYPE (LOW X) TO N-TYPE. FROM XPS RESULTS IT WAS FOUND THAT BI IS INTRODUCED AS A POSITIVE CHANGED CENTRE. THE RESULTS ARE INTERPRETED AS THE EFFECT OF THE SHIFT OF THE FERMI LEVEL CLOSER TO THE CONDUCTION BOUND DUE TO THE INCORPORATION OF POSITIVE U DEFECTS THAT UNPIN THE FERMI ENERGY. IT WAS ALSO FABRICATED A P-N JUNCTION CASE BEHAVIOR THAT IS EXPECTED FOR LOW CONDUCTIVITY AMORPHOUS SEMICONDUCTORS. VALUES OF DRIFT MOBILITY HAVE BEEN OBTAINED FROM THE STEADY STATE AND TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS. THEABOVE TECHNIQUES WERE ALSO USED TO CHARACTERISE FILMS OF GLOW DISCHARGE A-SI:HDEPOSITED UNDER DIFFERENT PREPARATION CONDITIONS.","Σ'ΑΥΤΗ ΤΗΝ ΕΡΓΑΣΙΑ ΕΦΑΡΜΟΣΤΗΚΑΝ ΔΙΑΦΟΡΕΣ ΤΕΧΝΙΚΕΣ ΓΙΑ ΤΗΝ ΜΕΛΕΤΗ ΦΑΙΝΟΜΕΝΩΝ ΜΕΤΑΦΟΡΑΣ ΟΠΩΣ Η D.C. ΑΓΩΓΙΜΟΤΗΤΑ ΣΚΟΤΟΥΣ, ΘΕΡΜΟΤΑΣΗ, ΦΩΤΟΑΓΩΓΙΜΟΤΗΤΑ, ΟΠΤΙΚΗ ΑΠΟΡΡΟΦΗΣΗ ΚΑΙ Η CPM ΜΕΘΟΔΟΣ ΣΕ ΑΜΟΡΦΑ FILM ΑΠΟ SPUTTERING GE SE BIX ΚΑΙ ΣΕ ΥΔΡΟΓΟΝΟΜΕΝΟ ΠΥΡΙΤΙΟ A-SI:H ΠΑΡΑΣΚΕΥΑΣΜΕΝΟ ΜΕ ΤΗ ΜΕΘΟΔΟ ΤΗΣ ΕΚΚΕΝΩΣΗΣ ΑΙΓΛΗΣ (GLAR DISCHARGE) . ΒΡΕΘΗΚΕ ΠΩΣ Η ΠΡΟΣΘΗΚΗ 15% ΒΙ ΠΡΟΚΑΛΕΙ ΜΙΑ ΑΥΞΗΣΗ ΤΟΥ ΜΕΓΕΘΟΥΣ ΤΗΣ ΑΓΩΓΙΜΟΤΗΤΑΣ ΣΚΟΤΟΥΣ ΜΕΧΡΙ 10 ΤΑΞΕΩΣ ΜΕΓΕΘΟΥΣ ΚΑΘΩΣ ΕΠΙΣΗΣ ΚΑΙ ΜΙΑ ΜΕΙΩΣΗ ΣΤΟ ΟΠΤΙΚΟ ΧΑΣΜΑ. Η ΘΕΡΜΟΗΛΕΚΤΡΙΚΗ ΤΑΣΗ ΒΡΕΘΗΚΕ ΑΡΝΗΤΙΚΗ ΓΙΑ Χ>10, ΥΠΟΔΕΙΚΝΥΟΝΤΑΣ ΠΩΣ Ο ΤΥΠΟΣ ΤΗΣ ΑΓΩΓΙΜΟΤΗΤΑΣ ΑΛΛΑΞΕ ΑΠΟ Ρ-ΤΥΠΟΥ (ΜΙΚΡΑ Χ) ΣΕ Ν-ΤΥΠΟΥ. ΑΠΟ ΑΠΟΤΕΛΕΣΜΑΤΑ XPS ΒΡΕΘΗΚΕ ΠΩΣ ΤΟ ΒΙ ΕΙΣΑΓΕΤΑΙ ΣΑΝ ΘΕΤΙΚΑ ΦΟΡΤΙΣΜΕΝΟ ΚΕΝΤΡΟ. ΤΑ ΑΠΟΤΕΛΕΣΜΑΤΑ ΕΡΜΗΝΕΥΘΗΚΑΝ ΜΕ ΤΗΝ ΜΕΤΑΚΙΝΗΣΗ ΤΗΣ ΣΤΑΘΜΗΣ FERMI ΠΡΟΣ ΤΗΝ ΖΩΝΗ ΑΓΩΓΙΜΟΤΗΤΑΣ ΕΞΑΙΤΙΑΣ ΤΗΣ ΕΙΣΑΓΩΓΗΣ ΑΤΕΛΕΙΩΝ ΜΕ ΘΕΤΙΚΗ ΕΝΕΡΓΕΙΑ ΣΥΣΧΕΤΙΣΗΣ. ΕΠΙΣΗΣ ΚΑΤΑΣΚΕΥΑΣΤΗΚΕ Ρ.Ν ΕΠΑΦΗΣ ΑΠΟ ΑΥΤΑ ΤΑ ΥΛΙΚΑ. ΟΙ I-V ΧΑΡΑΚΤΗΡΙΣΤΙΚΕΣ ΠΑΡΟΥΣΙΑΖΟΥΝ ΤΗ ΣΥΜΠΕΡΙΦΟΡΑ ΤΩΝ ΗΜΙΑΓΩΓΩΝ ΑΠΟΚΑΤΑΣΤΑΣΗΣ ΟΠΩΣ ΑΝΑΜΕΝΕΤΑΙ ΣΕ ΑΜΟΡΦΟΥΣ ΗΜΙΑΓΩΓΟΥΣ ΜΙΚΡΗΣ ΑΓΩΓΙΜΟΤΗΤΑΣ. ΕΓΙΝΑΝ, ΥΠΟΛΟΓΙΣΜΟΙ ΤΗΣ ΕΥΚΙΝΗΣΙΑΣ ΟΛΙΣΘΗΣΗΣ ΑΠΟ ΜΕΤΡΗΣΕΙΣ ΑΓΩΓΙΜΟΤΗΤΑΣ ΣΤΑΘΕΡΟΥ ΦΩΤΙΣΜΟΥ ΚΑΙ ΑΠΟ ΜΕΤΑΒΑΤΙΚΗ ΦΩΤΟΑΓΩΓΙΜΟΤΗΤΑ. ΟΙ ΠΑΡΑΠΑΝΩ ΤΕΧΝΙΚΕΣ ΧΡΗΣΙΜΟΠΟΙΗΘΗΚΑΝ ΕΠΙΣΗΣ ΓΙΑ ΝΑ ΧΑΡΑΚΤΗΡΙΣΤΟΥΝ FILMS A-SI:H ΤΑ ΟΠΟΙΑ ΕΝΑΠΟΤΕΘΗΚΑΝ ΚΑΤΩ ΑΠΟ ΔΙΑΦΟΡΕΤΙΚΕΣ ΣΥΝΘΗΚΕΣ ΠΑΡΑΣΚΕΥΗΣ."],"dc:identifier":["10.12681/eadd/1680","http://hdl.handle.net/10442/hedi/1680"],"dc:language":["gre"],"dc:publisher":["University of Patras","Πανεπιστήμιο Πατρών"],"dc:subject":["P.C. ΗΛΕΚΤΡΙΚΗ ΑΓΩΓΙΜΟΤΗΤΑ ΣΚΟΤΟΥΣ","ΑΜΟΡΦΟ ΥΔΡΟΓΟΝΟΠΟΙΗΜΕΝΟ ΠΥΡΙΤΙΟ","Άμορφοι ημιαγωγοί","ΕΠΑΦΗ Ρ-Ν","Ευκινησία","ΗΜΙΑΓΩΓΟΙ ΑΠΟΚΑΤΑΣΤΑΣΗΣ","ΘΕΡΜΟΤΑΣΗ","ΟΠΤΙΚΗ ΑΠΟΡΡΟΦΗΣΗ","Φωτοαγωγιμότητα","ΧΑΛΚΟΓΕΝΗ ΥΛΙΚΑ","Amorphous semiconductors","AMORPHOUSHYDROGENATED SILICON","Chalcogenides","DRIFT MOBILITY","OPTICAL ABSORPTION","P-N JUNCTION","P.C. ELECTRICAL CONDUCTIVITY","Photoconductivity","RELAXATION SEMICONDUCTORS","Thermopower","Φυσικές Επιστήμες","Φυσική","Natural Sciences","Physical Sciences"],"dc:title":["ΦΑΙΝΟΜΕΝΑ ΜΕΤΑΦΟΡΑΣ ΑΜΟΡΦΩΝ ΗΜΙΑΓΩΓΩΝ","TRANSPORT PROPERTIES OF AMORPHOUS SEMICONDUCTORS"],"dc:type":["PhD Thesis"]},"updated_at":"2026-07-24T02:25:05Z"}