ΦΑΣΜΑΤΟΣΚΟΠΙΚΗ ΜΕΛΕΤΗ ΒΑΘΜΙΔΩΝ ΘΕΡΜΟΚΡΑΣΙΑΣ ΣΤΗΝ ΕΠΙΦΑΝΕΙΑ ΗΜΙΑΓΩΓΩΝ, ΛΟΓΩ ΑΚΤΙΝΟΒΟΛΙΑΣ LASER

THE SHARP FOCUSING OF AN INTENSE LASER BEAM ON THE SURFACE OF CRYSTALLINE SILICON INDUCES AND ASSYMETRIC BROADENING OF THE FIRST ORDER RAMAN SPECTRUM, TOWARDSTHE LOWER RELATIVE FREQUENCIES. WE CONFIRM THIS SYSTEMATIC BEHAVIOUR AND INTERPRET IT AS THE RESULT OF AN INTEGRATION, OVER THE TOTAL SCATTERING VOLUME, OF ELEMENTARY CONTRIBUTIONS. THE CHARACTERISTICS OF THESE DIFFERENTIAL CONTRIBUTIONS (BANDS) VARY ACCORDING TO THE TEMPERATURE DEPENDENCE OF THE OPTICAL FUNCTIONSAND OF THE UNHARMONIC AND THERMOELASTIC PROPERTIES OF THE MATERNAL. THESE EFFECTS HAVE BEEN STUDIED FOR VARIOUS WAVE LENGTHS, BACKGROUND TEMPERATURES, AND FOR HIGH CONCENTRATION OF P-TYPE CARRIERS. WE FIND VERY GOOD AGREEMENT BETWEEN THE EXPERIMENTAL RESULTS AND THE THEORETICAL PREDICTIONS, BASED ON THE THERMAL MODEL. FINALLY A DECONVOLUTION PROCEDURE IS PROPOSED IN ORDER TO EXTRACT THE TEMPERATURE DISTRIBUTION FROM THE RAMAN SPECTRA.

Grantor dc:publisher

National Technical University of Athens (NTUA)

Year dc:date

1988

Author dc:creator

• Ράπτης, Ιωάννης

• ASSYMETRIC BROADENING
• FIRST-ORDER RAMAN SPECTRUM
• Frequency shift
• LASER BEAM
• Raman spectroscopy
• Silicon
• Temperature gradients
• ΑΣΥΜΜΕΤΡΗ ΔΙΕΡΕΥΝΗΣΗ
• Βαθμίδες θερμοκρασίας
• ΔΕΣΜΗ LASER
• ΜΕΤΑΤΟΠΙΣΗ ΣΥΧΝΟΤΗΤΑΣ
• Πυρίτιο
• ΦΑΣΜΑ RAMAN ΠΡΩΤΗΣ ΤΑΞΗΣ
• Φασματοσκοπία Raman
• Φυσικές Επιστήμες
• Φυσική
• Natural Sciences
• Physical Sciences

Language dc:language

gre

Identifier

10.12681/eadd/0701

OAI identifier oai:identifier

oai:10442/0701