Low-energy electron diffraction effects at complex interfaces

Low-energy electron scattering was used as a tool to study electron-stimulated processes at complex interfaces. The electron diffraction in each complex interface is theoretically treated by a multiple scattering formalism for quantitative analysis. Mathematical descriptions of electron-stimulated processes and a multiple scattering expansion extended from the single-scattering case are presented. This analysis method was applied in three research topics: These are 1) electron-stimulated desorption of Cl+ from Si surfaces, 2) characterization of epitaxial graphene on Si-terminated SiC(0001), and 3) low-energy electron induced DNA damage. Zone-specific desorption of Cl+ from Si(111)- 7X7:Cl surfaces was demonstrated. Graphene epitaxially grown on SiC(0001) surfaces was analyzed using Auger electron diffraction and Raman scattering spectroscopy. Finally, the roles of interfacial water and dissociative electron attachment resonances in low-energy electron-induced DNA damage were revealed. Electron scattering calculations using the "path approach" were applied in all of the above mentioned studies. The combination of theory and experiment has lead to insight regarding electron scattering with complex targets.

Department dc:contributor.department

Chemistry and Biochemistry

Grantor dc:publisher

Georgia Institute of Technology

Year dc:date.issued

2009

Author dc:creator

• Oh, Doogie

Advisor dc:contributor.advisor

• Orlando, Thomas M.

Committee members dc:contributor.committeemember

• Joseph Perry
• Nicholas Hud
• Phillip First
• Hernandez, Rigoberto

• ESD
• AED
• DEA
• DESD
• Green function

Handle dc:identifier.uri

http://hdl.handle.net/1853/28236

OAI identifier oai:identifier

oai:repository.gatech.edu:1853/28236