THERMAL CONDUCTIVITY OF THIN FILM NIOBIUM DISELENIDE FROM TEMPERATURE-DEPENDENT RAMAN

Niobium diselenide (NbSe2) possess a high electrical conductivity and low thermal conductivity, making it a candidate for thermoelectric devices. While the electronic properties of (NbSe2) has been relatively explored, the lateral thermal conductivity for (NbSe2) has remained unknown. In this report, we present the lateral thermal conductivity of (NbSe2) determined by nondestructive opto-thermo method utilizing micro-Raman spectroscopy. The thermal conductivity k=15(+4/-4) W/mK was obtained at room temperature and we further verified by hall measurements that (NbSe2) conducts heat mostly through electrons. The results shed lights on the potential of Niobium diselenide as a thermoelectric device.

Name thesis:degree_name

M.S., Materials Science and Engineering

Level thesis:degree_level

Master of Science

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

Cornell University

Year dc:date.issued

2017

Author dc:creator

• Lien, Huai-Hsun

Committee member dc:contributor.committeemember

• Xing, Huili Grace

• Hall measurement
• niobium diselenide
• thermal conductivity
• Raman
• transitional metal dichacogenides
• Physics
• Materials Science
• Electrical engineering
• thin film

Language dc:language.iso

en_US

DOI

https://doi.org/10.7298/X4RR1WD6

Dc Identifier Other

ProQuest Submission ID: 10138
ProQuest Publication ID: 10604124

OAI identifier oai:identifier

oai:ecommons.cornell.edu:1813/56861