{"id":{"repo_id":"cornell","oai_identifier":"oai:ecommons.cornell.edu:1813/56861"},"canonical_url":"https://search.dev.ndltd.org/etd/cornell/oai:ecommons.cornell.edu:1813/56861","repository":{"repo_id":"cornell","name":"Cornell University","base_url":"https://ecommons.cornell.edu/server/oai/request"},"display":{"title":"THERMAL CONDUCTIVITY OF THIN FILM NIOBIUM DISELENIDE FROM TEMPERATURE-DEPENDENT RAMAN","abstract":"Niobium diselenide (NbSe2) possess a high electrical conductivity and low thermal conductivity, making it a candidate for thermoelectric devices. While the electronic properties of (NbSe2) has been relatively explored, the lateral thermal conductivity for (NbSe2) has remained unknown. In this report, we present the lateral thermal conductivity of (NbSe2) determined by nondestructive opto-thermo method utilizing micro-Raman spectroscopy. The thermal conductivity k=15(+4/-4) W/mK was obtained at room temperature and we further verified by hall measurements that (NbSe2) conducts heat mostly through electrons. The results shed lights on the potential of Niobium diselenide as a thermoelectric device.","abstract_html":"Niobium diselenide (NbSe2) possess a high electrical conductivity and low thermal conductivity, making it a candidate for thermoelectric devices. While the electronic properties of (NbSe2) has been relatively explored, the lateral thermal conductivity for (NbSe2) has remained unknown. In this report, we present the lateral thermal conductivity of (NbSe2) determined by nondestructive opto-thermo method utilizing micro-Raman spectroscopy. The thermal conductivity k=15(+4/-4) W/mK was obtained at room temperature and we further verified by hall measurements that (NbSe2) conducts heat mostly through electrons. The results shed lights on the potential of Niobium diselenide as a thermoelectric device.","abstract_has_math":false,"creators":["Lien, Huai-Hsun"],"institution":"Cornell University","degree_name":"M.S., Materials Science and Engineering","degree_level":"Master of Science","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":["Xing, Huili Grace"],"year":2017,"date_issued":"2017-08-30","date_published":"2017-08-30","updated_at":"2026-07-24T01:49:02Z","subjects":["Hall measurement","niobium diselenide","thermal conductivity","Raman","transitional metal dichacogenides","Physics","Materials Science","Electrical engineering","thin film"],"languages":["en_US"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier.doi","label":"DOI","values":["https://doi.org/10.7298/X4RR1WD6"],"render_values":[{"text":"https://doi.org/10.7298/X4RR1WD6","href":"https://doi.org/10.7298/X4RR1WD6","code":true}]},{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["ProQuest Submission ID: 10138","ProQuest Publication ID: 10604124"],"render_values":[{"text":"ProQuest Submission ID: 10138","href":null,"code":true},{"text":"ProQuest Publication ID: 10604124","href":null,"code":true}]}]},"links":{"outbound_url":"https://hdl.handle.net/1813/56861","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Xing, Huili Grace"]},{"key":"dc:creator","label":"Author","values":["Lien, Huai-Hsun"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2018-04-26T14:16:53Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2018-04-26T14:16:53Z"]},{"key":"dc:date.issued","label":"Date","values":["2017-08-30"]},{"key":"dc:type","label":"Dc Type","values":["dissertation or thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Master of Science"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S., Materials Science and Engineering"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Cornell University"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Hall measurement","niobium diselenide","thermal conductivity","Raman","transitional metal dichacogenides","Physics","Materials Science","Electrical engineering","thin film"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en_US"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.doi","label":"DOI","values":["https://doi.org/10.7298/X4RR1WD6"]},{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["ProQuest Submission ID: 10138","ProQuest Publication ID: 10604124"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://hdl.handle.net/1813/56861"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Niobium diselenide (NbSe2) possess a high electrical conductivity and low thermal conductivity, making it a candidate for thermoelectric devices. While the electronic properties of (NbSe2) has been relatively explored, the lateral thermal conductivity for (NbSe2) has remained unknown. In this report, we present the lateral thermal conductivity of (NbSe2) determined by nondestructive opto-thermo method utilizing micro-Raman spectroscopy. The thermal conductivity k=15(+4/-4) W/mK was obtained at room temperature and we further verified by hall measurements that (NbSe2) conducts heat mostly through electrons. The results shed lights on the potential of Niobium diselenide as a thermoelectric device."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["THERMAL CONDUCTIVITY OF THIN FILM NIOBIUM DISELENIDE FROM TEMPERATURE-DEPENDENT RAMAN"]}]}],"canonical_facts":{"dc:contributor.committeemember":["Xing, Huili Grace"],"dc:creator":["Lien, Huai-Hsun"],"dc:date.accessioned":["2018-04-26T14:16:53Z"],"dc:date.available":["2018-04-26T14:16:53Z"],"dc:date.issued":["2017-08-30"],"dc:description.abstract":["Niobium diselenide (NbSe2) possess a high electrical conductivity and low thermal conductivity, making it a candidate for thermoelectric devices. While the electronic properties of (NbSe2) has been relatively explored, the lateral thermal conductivity for (NbSe2) has remained unknown. In this report, we present the lateral thermal conductivity of (NbSe2) determined by nondestructive opto-thermo method utilizing micro-Raman spectroscopy. The thermal conductivity k=15(+4/-4) W/mK was obtained at room temperature and we further verified by hall measurements that (NbSe2) conducts heat mostly through electrons. The results shed lights on the potential of Niobium diselenide as a thermoelectric device."],"dc:format.mimetype":["application/pdf"],"dc:identifier.doi":["https://doi.org/10.7298/X4RR1WD6"],"dc:identifier.other":["ProQuest Submission ID: 10138","ProQuest Publication ID: 10604124"],"dc:identifier.uri":["https://hdl.handle.net/1813/56861"],"dc:language.iso":["en_US"],"dc:subject":["Hall measurement","niobium diselenide","thermal conductivity","Raman","transitional metal dichacogenides","Physics","Materials Science","Electrical engineering","thin film"],"dc:title":["THERMAL CONDUCTIVITY OF THIN FILM NIOBIUM DISELENIDE FROM TEMPERATURE-DEPENDENT RAMAN"],"dc:type":["dissertation or thesis"],"thesis:degree_discipline":["Materials Science and Engineering"],"thesis:degree_level":["Master of Science"],"thesis:degree_name":["M.S., Materials Science and Engineering"],"thesis:institution_name":["Cornell University"]},"updated_at":"2026-07-24T01:49:02Z"}