METHODS OF AREA-SELECTIVE ATOMIC LAYER DEPOSITION OF A METAL OXIDE USING SMALL MOLECULE INHIBITORS AND COMPETITIVE ADSORPTION

The semiconductor industry faces growing manufacturing challenges as device dimensions shrink and nanopattern complexity increases. Bottom-up deposition processes are actively being pursued to overcome scaling and conformality limits of conventional top-down approaches and lower process costs. Area-selective atomic layer deposition (AS-ALD) offers atomic-level control, excellent conformality, and precise pattern definition critical for next-generation device fabrication. Novel techniques for selectively blocking deposition on SiO2 for the AS-ALD of Al2O3 on Cu were studied. Blocking performance using a small molecule inhibitor (DMATMS) applied through pre-soak and/or cyclically in situ vs. a self-assembled monolayer (ODTS) prepared ex situ was assessed using different precursor (TMA, BDMADA-Al), co-reactant (H2O, t-BuOH), and process temperature (120, 285 °C) configurations. Pulsing a novel competitive co-adsorbate with the precursor in conjunction with cyclic reapplication of DMATMS demonstrated optimal (~99%) growth attenuation for a vapor-phase process. Finally, the capabilities of an improved reactant delivery system for plasma-enhanced ALD were determined.

Name thesis:degree_name

M.S., Chemical Engineering

Level thesis:degree_level

Master of Science

Discipline thesis:degree_discipline

Chemical Engineering

Grantor

Cornell University

Year dc:date.issued

2025

Author dc:creator

• Combs, Burke

Committee member dc:contributor.committeemember

• DiStasio, Robert

Language dc:language.iso

en

DOI

https://doi.org/10.7298/z5zt-dw10

Dc Identifier Other

ProQuest Submission ID: 12634
ProQuest Publication ID: 32395823

OAI identifier oai:identifier

oai:ecommons.cornell.edu:1813/120991