{"id":{"repo_id":"cornell","oai_identifier":"oai:ecommons.cornell.edu:1813/120991"},"canonical_url":"https://search.dev.ndltd.org/etd/cornell/oai:ecommons.cornell.edu:1813/120991","repository":{"repo_id":"cornell","name":"Cornell University","base_url":"https://ecommons.cornell.edu/server/oai/request"},"display":{"title":"METHODS OF AREA-SELECTIVE ATOMIC LAYER DEPOSITION OF A METAL OXIDE USING SMALL MOLECULE INHIBITORS AND COMPETITIVE ADSORPTION","abstract":"The semiconductor industry faces growing manufacturing challenges as device dimensions shrink and nanopattern complexity increases. Bottom-up deposition processes are actively being pursued to overcome scaling and conformality limits of conventional top-down approaches and lower process costs. Area-selective atomic layer deposition (AS-ALD) offers atomic-level control, excellent conformality, and precise pattern definition critical for next-generation device fabrication. Novel techniques for selectively blocking deposition on SiO2 for the AS-ALD of Al2O3 on Cu were studied. Blocking performance using a small molecule inhibitor (DMATMS) applied through pre-soak and/or cyclically in situ vs. a self-assembled monolayer (ODTS) prepared ex situ was assessed using different precursor (TMA, BDMADA-Al), co-reactant (H2O, t-BuOH), and process temperature (120, 285 °C) configurations. Pulsing a novel competitive co-adsorbate with the precursor in conjunction with cyclic reapplication of DMATMS demonstrated optimal (~99%) growth attenuation for a vapor-phase process. Finally, the capabilities of an improved reactant delivery system for plasma-enhanced ALD were determined.","abstract_html":"The semiconductor industry faces growing manufacturing challenges as device dimensions shrink and nanopattern complexity increases. Bottom-up deposition processes are actively being pursued to overcome scaling and conformality limits of conventional top-down approaches and lower process costs. Area-selective atomic layer deposition (AS-ALD) offers atomic-level control, excellent conformality, and precise pattern definition critical for next-generation device fabrication. Novel techniques for selectively blocking deposition on SiO2 for the AS-ALD of Al2O3 on Cu were studied. Blocking performance using a small molecule inhibitor (DMATMS) applied through pre-soak and/or cyclically in situ vs. a self-assembled monolayer (ODTS) prepared ex situ was assessed using different precursor (TMA, BDMADA-Al), co-reactant (H2O, t-BuOH), and process temperature (120, 285 °C) configurations. Pulsing a novel competitive co-adsorbate with the precursor in conjunction with cyclic reapplication of DMATMS demonstrated optimal (~99%) growth attenuation for a vapor-phase process. Finally, the capabilities of an improved reactant delivery system for plasma-enhanced ALD were determined.","abstract_has_math":false,"creators":["Combs, Burke"],"institution":"Cornell University","degree_name":"M.S., Chemical Engineering","degree_level":"Master of Science","degree_discipline":"Chemical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":["DiStasio, Robert"],"year":2025,"date_issued":"2025-12","date_published":"2025-12","updated_at":"2026-07-24T01:48:58Z","subjects":[],"languages":["en"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier.doi","label":"DOI","values":["https://doi.org/10.7298/z5zt-dw10"],"render_values":[{"text":"https://doi.org/10.7298/z5zt-dw10","href":"https://doi.org/10.7298/z5zt-dw10","code":true}]},{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["ProQuest Submission ID: 12634","ProQuest Publication ID: 32395823"],"render_values":[{"text":"ProQuest Submission ID: 12634","href":null,"code":true},{"text":"ProQuest Publication ID: 32395823","href":null,"code":true}]}]},"links":{"outbound_url":"https://hdl.handle.net/1813/120991","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.committeemember","label":"Committee Member","values":["DiStasio, Robert"]},{"key":"dc:creator","label":"Author","values":["Combs, Burke"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2026-04-02T19:05:23Z"]},{"key":"dc:date.issued","label":"Date","values":["2025-12"]},{"key":"dc:type","label":"Dc Type","values":["dissertation or thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Chemical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Master of Science"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S., Chemical Engineering"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Cornell University"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.doi","label":"DOI","values":["https://doi.org/10.7298/z5zt-dw10"]},{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["ProQuest Submission ID: 12634","ProQuest Publication ID: 32395823"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://hdl.handle.net/1813/120991"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["114 pages"]},{"key":"dc:description.abstract","label":"Abstract","values":["The semiconductor industry faces growing manufacturing challenges as device dimensions shrink and nanopattern complexity increases. Bottom-up deposition processes are actively being pursued to overcome scaling and conformality limits of conventional top-down approaches and lower process costs. Area-selective atomic layer deposition (AS-ALD) offers atomic-level control, excellent conformality, and precise pattern definition critical for next-generation device fabrication. Novel techniques for selectively blocking deposition on SiO2 for the AS-ALD of Al2O3 on Cu were studied. Blocking performance using a small molecule inhibitor (DMATMS) applied through pre-soak and/or cyclically in situ vs. a self-assembled monolayer (ODTS) prepared ex situ was assessed using different precursor (TMA, BDMADA-Al), co-reactant (H2O, t-BuOH), and process temperature (120, 285 °C) configurations. Pulsing a novel competitive co-adsorbate with the precursor in conjunction with cyclic reapplication of DMATMS demonstrated optimal (~99%) growth attenuation for a vapor-phase process. Finally, the capabilities of an improved reactant delivery system for plasma-enhanced ALD were determined."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["METHODS OF AREA-SELECTIVE ATOMIC LAYER DEPOSITION OF A METAL OXIDE USING SMALL MOLECULE INHIBITORS AND COMPETITIVE ADSORPTION"]}]}],"canonical_facts":{"dc:contributor.committeemember":["DiStasio, Robert"],"dc:creator":["Combs, Burke"],"dc:date.accessioned":["2026-04-02T19:05:23Z"],"dc:date.issued":["2025-12"],"dc:description":["114 pages"],"dc:description.abstract":["The semiconductor industry faces growing manufacturing challenges as device dimensions shrink and nanopattern complexity increases. Bottom-up deposition processes are actively being pursued to overcome scaling and conformality limits of conventional top-down approaches and lower process costs. Area-selective atomic layer deposition (AS-ALD) offers atomic-level control, excellent conformality, and precise pattern definition critical for next-generation device fabrication. Novel techniques for selectively blocking deposition on SiO2 for the AS-ALD of Al2O3 on Cu were studied. Blocking performance using a small molecule inhibitor (DMATMS) applied through pre-soak and/or cyclically in situ vs. a self-assembled monolayer (ODTS) prepared ex situ was assessed using different precursor (TMA, BDMADA-Al), co-reactant (H2O, t-BuOH), and process temperature (120, 285 °C) configurations. Pulsing a novel competitive co-adsorbate with the precursor in conjunction with cyclic reapplication of DMATMS demonstrated optimal (~99%) growth attenuation for a vapor-phase process. Finally, the capabilities of an improved reactant delivery system for plasma-enhanced ALD were determined."],"dc:format.mimetype":["application/pdf"],"dc:identifier.doi":["https://doi.org/10.7298/z5zt-dw10"],"dc:identifier.other":["ProQuest Submission ID: 12634","ProQuest Publication ID: 32395823"],"dc:identifier.uri":["https://hdl.handle.net/1813/120991"],"dc:language.iso":["en"],"dc:title":["METHODS OF AREA-SELECTIVE ATOMIC LAYER DEPOSITION OF A METAL OXIDE USING SMALL MOLECULE INHIBITORS AND COMPETITIVE ADSORPTION"],"dc:type":["dissertation or thesis"],"thesis:degree_discipline":["Chemical Engineering"],"thesis:degree_level":["Master of Science"],"thesis:degree_name":["M.S., Chemical Engineering"],"thesis:institution_name":["Cornell University"]},"updated_at":"2026-07-24T01:48:58Z"}