Electrical characterisation of simple a-Si:H and nc-Si devices on paper substrates deposited by hot wire chemical vapour deposition and printing techniques

In this work we report on the electrical transport properties of two classes of silicon: hydrogenated amorphous silicon (a-Si:H) obtained by hot wire chemical vapour deposition (HWCVD), and printed nanocrystalline silicon (nc-Si), both deposited on a flexible, lightweight substrate of 80 g m-2 wood-free paper. For different devices such as field effect transistors and n-i-p solar cells, electrical measurements will be discussed. A special emphasis is placed on field effect mobility and amplification factor measurements because these provide information about the quality of the material.

Grantor dc:publisher.institution

Department of Physics

Year dc:date.issued

2004

Author dc:creator

• Nemalili, Fhatuwani Patrick

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/11427/6543

OAI identifier oai:identifier

oai:open.uct.ac.za:11427/6543