{"id":{"repo_id":"cape-town","oai_identifier":"oai:open.uct.ac.za:11427/6543"},"canonical_url":"https://search.dev.ndltd.org/etd/cape-town/oai:open.uct.ac.za:11427/6543","repository":{"repo_id":"cape-town","name":"University of Cape Town","base_url":"https://open.uct.ac.za/oai/request"},"display":{"title":"Electrical characterisation of simple a-Si:H and nc-Si devices on paper substrates deposited by hot wire chemical vapour deposition and printing techniques","abstract":"In this work we report on the electrical transport properties of two classes of silicon: hydrogenated amorphous silicon (a-Si:H) obtained by hot wire chemical vapour deposition (HWCVD), and printed nanocrystalline silicon (nc-Si), both deposited on a flexible, lightweight substrate of 80 g m-2 wood-free paper. For different devices such as field effect transistors and n-i-p solar cells, electrical measurements will be discussed. A special emphasis is placed on field effect mobility and amplification factor measurements because these provide information about the quality of the material.","abstract_html":"In this work we report on the electrical transport properties of two classes of silicon: hydrogenated amorphous silicon (a-Si:H) obtained by hot wire chemical vapour deposition (HWCVD), and printed nanocrystalline silicon (nc-Si), both deposited on a flexible, lightweight substrate of 80 g m-2 wood-free paper. For different devices such as field effect transistors and n-i-p solar cells, electrical measurements will be discussed. A special emphasis is placed on field effect mobility and amplification factor measurements because these provide information about the quality of the material.","abstract_has_math":false,"creators":["Nemalili, Fhatuwani Patrick"],"institution":"Department of Physics","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2004,"date_issued":"2004","date_published":"2004","updated_at":"2026-07-22T22:22:50Z","subjects":[],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/11427/6543","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Nemalili, Fhatuwani Patrick"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2014-08-13T20:08:31Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2014-08-13T20:08:31Z"]},{"key":"dc:date.issued","label":"Date","values":["2004"]},{"key":"dc:publisher.department","label":"Dc Publisher Department","values":["Department of Physics"]},{"key":"dc:publisher.institution","label":"Dc Publisher Institution","values":["University of Cape Town"]},{"key":"dc:type","label":"Dc Type","values":["Master Thesis"]},{"key":"dc:type.qualificationlevel","label":"Dc Type Qualificationlevel","values":["Masters"]},{"key":"dc:type.qualificationname","label":"Dc Type Qualificationname","values":["MSc"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/11427/6543"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Includes bibliographical references (leaves 68-72)."]},{"key":"dc:description.abstract","label":"Abstract","values":["In this work we report on the electrical transport properties of two classes of silicon: hydrogenated amorphous silicon (a-Si:H) obtained by hot wire chemical vapour deposition (HWCVD), and printed nanocrystalline silicon (nc-Si), both deposited on a flexible, lightweight substrate of 80 g m-2 wood-free paper. For different devices such as field effect transistors and n-i-p solar cells, electrical measurements will be discussed. A special emphasis is placed on field effect mobility and amplification factor measurements because these provide information about the quality of the material."]},{"key":"dc:title","label":"Title","values":["Electrical characterisation of simple a-Si:H and nc-Si devices on paper substrates deposited by hot wire chemical vapour deposition and printing techniques"]}]}],"canonical_facts":{"dc:creator":["Nemalili, Fhatuwani Patrick"],"dc:date.accessioned":["2014-08-13T20:08:31Z"],"dc:date.available":["2014-08-13T20:08:31Z"],"dc:date.issued":["2004"],"dc:description":["Includes bibliographical references (leaves 68-72)."],"dc:description.abstract":["In this work we report on the electrical transport properties of two classes of silicon: hydrogenated amorphous silicon (a-Si:H) obtained by hot wire chemical vapour deposition (HWCVD), and printed nanocrystalline silicon (nc-Si), both deposited on a flexible, lightweight substrate of 80 g m-2 wood-free paper. For different devices such as field effect transistors and n-i-p solar cells, electrical measurements will be discussed. A special emphasis is placed on field effect mobility and amplification factor measurements because these provide information about the quality of the material."],"dc:identifier.uri":["http://hdl.handle.net/11427/6543"],"dc:language.iso":["eng"],"dc:publisher.department":["Department of Physics"],"dc:publisher.institution":["University of Cape Town"],"dc:title":["Electrical characterisation of simple a-Si:H and nc-Si devices on paper substrates deposited by hot wire chemical vapour deposition and printing techniques"],"dc:type":["Master Thesis"],"dc:type.qualificationlevel":["Masters"],"dc:type.qualificationname":["MSc"]},"updated_at":"2026-07-22T22:22:50Z"}