Controlling CoSi2 formation temperature by reactive deposition

When cobalt is evaporated under ultra high vacuum conditions onto a heated silicon substrate, the reaction between the cobalt and the silicon starts immediately and cobalt silicides are formed directly - a technique referred to as reactive deposition. This procedure was used to grow silicide films over a variety of temperatures ranging between 375 - 550 ce. It was found that a disilicide film is formed directly for substrate temperature maintained at T

Grantor dc:publisher.institution

Department of Physics

Year dc:date.issued

2008

Author dc:creator

• Ahmed, Hind Ali Mohmmed

Advisor dc:contributor.advisor

• Comrie, Craig

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/11427/6523

OAI identifier oai:identifier

oai:open.uct.ac.za:11427/6523