{"id":{"repo_id":"cape-town","oai_identifier":"oai:open.uct.ac.za:11427/6523"},"canonical_url":"https://search.dev.ndltd.org/etd/cape-town/oai:open.uct.ac.za:11427/6523","repository":{"repo_id":"cape-town","name":"University of Cape Town","base_url":"https://open.uct.ac.za/oai/request"},"display":{"title":"Controlling CoSi2 formation temperature by reactive deposition","abstract":"When cobalt is evaporated under ultra high vacuum conditions onto a heated silicon substrate, the reaction between the cobalt and the silicon starts immediately and cobalt silicides are formed directly - a technique referred to as reactive deposition. This procedure was used to grow silicide films over a variety of temperatures ranging between 375 - 550 ce. It was found that a disilicide film is formed directly for substrate temperature maintained at T","abstract_html":"When cobalt is evaporated under ultra high vacuum conditions onto a heated silicon substrate, the reaction between the cobalt and the silicon starts immediately and cobalt silicides are formed directly - a technique referred to as reactive deposition. This procedure was used to grow silicide films over a variety of temperatures ranging between 375 - 550 ce. 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This procedure was used to grow silicide films over a variety of temperatures ranging between 375 - 550 ce. It was found that a disilicide film is formed directly for substrate temperature maintained at T"]},{"key":"dc:title","label":"Title","values":["Controlling CoSi2 formation temperature by reactive deposition"]}]}],"canonical_facts":{"dc:contributor.advisor":["Comrie, Craig"],"dc:creator":["Ahmed, Hind Ali Mohmmed"],"dc:date.accessioned":["2014-08-13T20:03:38Z"],"dc:date.available":["2014-08-13T20:03:38Z"],"dc:date.issued":["2008"],"dc:description":["Includes abstract.","Includes bibliographical references (leaves 70-77)."],"dc:description.abstract":["When cobalt is evaporated under ultra high vacuum conditions onto a heated silicon substrate, the reaction between the cobalt and the silicon starts immediately and cobalt silicides are formed directly - a technique referred to as reactive deposition. 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