Light element analysis in amorphous and nanocrystalline silicon using ERDA and related techniques

In this work, investigation of light elements incorporated in the amorphous silicon network of hydrogenated and nanocrystalline silicon were analysed by using ion beam analytical techniques. To do this, amorphous silicon films were deposited by hot wire chemical vapour deposition, and a unique sampling method was developed for the analysis of nanocrystalline silicon powder. The combinations of non destructive, quantitative and sensitive Rutherford backscattering, resonance scattering and elastic recoil detection analysis were used in analysing these samples.

Grantor dc:publisher.institution

Department of Physics

Year dc:date.issued

2006

Author dc:creator

• Adegbite, Olusegun

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/11427/6522

OAI identifier oai:identifier

oai:open.uct.ac.za:11427/6522