Atomic mobility in thin solid Pa2Si films

A theory for the growth kinetics of planar silicide formation in single- and bi-layer metal silicon systems has been developed on the basis that the chemical potential gradient in the growing layer is the driving force for diffusion. The predictions of the theory, when applied to single layer metal-silicon systems, is in agreement with other theories and with experimental results. Planar growth of the outer silicide layer in bilayer metal-silicon systems is predicted to proceed linearly with time, both when controlled by an interfacial reaction and when limited by diffusion through the interposed silicide layer (when this layer is sufficiently thick). In the latter case it is predicted that the growth rate of the outer silicide layer is inversely proportional to the thickness of the interposed layer.

Grantor dc:publisher.institution

Department of Physics

Year dc:date.issued

1985

Author dc:creator

• Zingu, Edmund Charles

Advisor dc:contributor.advisor

• Comrie, Craig M

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/11427/17052

OAI identifier oai:identifier

oai:open.uct.ac.za:11427/17052