{"id":{"repo_id":"cape-town","oai_identifier":"oai:open.uct.ac.za:11427/17052"},"canonical_url":"https://search.dev.ndltd.org/etd/cape-town/oai:open.uct.ac.za:11427/17052","repository":{"repo_id":"cape-town","name":"University of Cape Town","base_url":"https://open.uct.ac.za/oai/request"},"display":{"title":"Atomic mobility in thin solid Pa2Si films","abstract":"A theory for the growth kinetics of planar silicide formation in single- and bi-layer metal silicon systems has been developed on the basis that the chemical potential gradient in the growing layer is the driving force for diffusion. The predictions of the theory, when applied to single layer metal-silicon systems, is in agreement with other theories and with experimental results. Planar growth of the outer silicide layer in bilayer metal-silicon systems is predicted to proceed linearly with time, both when controlled by an interfacial reaction and when limited by diffusion through the interposed silicide layer (when this layer is sufficiently thick). In the latter case it is predicted that the growth rate of the outer silicide layer is inversely proportional to the thickness of the interposed layer.","abstract_html":"A theory for the growth kinetics of planar silicide formation in single- and bi-layer metal silicon systems has been developed on the basis that the chemical potential gradient in the growing layer is the driving force for diffusion. The predictions of the theory, when applied to single layer metal-silicon systems, is in agreement with other theories and with experimental results. Planar growth of the outer silicide layer in bilayer metal-silicon systems is predicted to proceed linearly with time, both when controlled by an interfacial reaction and when limited by diffusion through the interposed silicide layer (when this layer is sufficiently thick). In the latter case it is predicted that the growth rate of the outer silicide layer is inversely proportional to the thickness of the interposed layer.","abstract_has_math":false,"creators":["Zingu, Edmund Charles"],"institution":"Department of Physics","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":["Comrie, Craig M"],"committee_chairs":[],"committee_members":[],"year":1985,"date_issued":"1985","date_published":"1985","updated_at":"2026-07-22T22:23:35Z","subjects":[],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/11427/17052","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Comrie, Craig M"]},{"key":"dc:creator","label":"Author","values":["Zingu, Edmund Charles"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2016-02-15T07:17:29Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2016-02-15T07:17:29Z"]},{"key":"dc:date.issued","label":"Date","values":["1985"]},{"key":"dc:publisher.department","label":"Dc Publisher Department","values":["Department of Physics"]},{"key":"dc:publisher.institution","label":"Dc Publisher Institution","values":["University of Cape Town"]},{"key":"dc:type","label":"Dc Type","values":["Doctoral Thesis"]},{"key":"dc:type.qualificationlevel","label":"Dc Type Qualificationlevel","values":["Doctoral"]},{"key":"dc:type.qualificationname","label":"Dc Type Qualificationname","values":["PhD"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/11427/17052"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Bibliography: pages 210-215."]},{"key":"dc:description.abstract","label":"Abstract","values":["A theory for the growth kinetics of planar silicide formation in single- and bi-layer metal silicon systems has been developed on the basis that the chemical potential gradient in the growing layer is the driving force for diffusion. The predictions of the theory, when applied to single layer metal-silicon systems, is in agreement with other theories and with experimental results. Planar growth of the outer silicide layer in bilayer metal-silicon systems is predicted to proceed linearly with time, both when controlled by an interfacial reaction and when limited by diffusion through the interposed silicide layer (when this layer is sufficiently thick). In the latter case it is predicted that the growth rate of the outer silicide layer is inversely proportional to the thickness of the interposed layer."]},{"key":"dc:title","label":"Title","values":["Atomic mobility in thin solid Pa2Si films"]}]}],"canonical_facts":{"dc:contributor.advisor":["Comrie, Craig M"],"dc:creator":["Zingu, Edmund Charles"],"dc:date.accessioned":["2016-02-15T07:17:29Z"],"dc:date.available":["2016-02-15T07:17:29Z"],"dc:date.issued":["1985"],"dc:description":["Bibliography: pages 210-215."],"dc:description.abstract":["A theory for the growth kinetics of planar silicide formation in single- and bi-layer metal silicon systems has been developed on the basis that the chemical potential gradient in the growing layer is the driving force for diffusion. The predictions of the theory, when applied to single layer metal-silicon systems, is in agreement with other theories and with experimental results. Planar growth of the outer silicide layer in bilayer metal-silicon systems is predicted to proceed linearly with time, both when controlled by an interfacial reaction and when limited by diffusion through the interposed silicide layer (when this layer is sufficiently thick). In the latter case it is predicted that the growth rate of the outer silicide layer is inversely proportional to the thickness of the interposed layer."],"dc:identifier.uri":["http://hdl.handle.net/11427/17052"],"dc:language.iso":["eng"],"dc:publisher.department":["Department of Physics"],"dc:publisher.institution":["University of Cape Town"],"dc:title":["Atomic mobility in thin solid Pa2Si films"],"dc:type":["Doctoral Thesis"],"dc:type.qualificationlevel":["Doctoral"],"dc:type.qualificationname":["PhD"]},"updated_at":"2026-07-22T22:23:35Z"}