The mutual influence of strain fields and point defect distributions in krypton implanted polycrystalline titanium

Stress migration of point and open-volume defects in materials is an important problem in a wide variety of applications, such as degradation of metallic interconnects in semiconductor devices, metal fatigue, and radiation damage profiles in ion implantation and surface modification. From a fundamental research view point, this study aims to contribute to a better understanding of the basic processes underlying the effect of stress assisted diffusion of foreign interstitial atoms under stress fields, using the Rutherford backscattering to obtain depth profiles, and synchroton radiation diffraction for the determination of stress fields. This has been achieved by creating a well designed model system of krypton implanted polycrystalline titanium.

Grantor dc:publisher.institution

Department of Physics

Year dc:date.issued

2008

Author dc:creator

• Nsengiyumva, Schadrack

Advisors dc:contributor.advisor

• Härting, Margit
• Britton, David T

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/11427/11812

OAI identifier oai:identifier

oai:open.uct.ac.za:11427/11812