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University of Cambridge

Photoluminescence from Defects in Two-Dimensional Transition Metal Dichalcogenides

Abstract

dc:description.abstract

Atomic defects in monolayer transition metal dichalcogenides (TMDs) such as chalcogen vacancies significantly affect their properties. In this thesis, I provide a reproducible and facile strategy to rationally induce chalcogen vacancies in monolayer MoS<sub>2</sub> by annealing at 600 °C in an argon/hydrogen (95 vol.%/5 vol.%) atmosphere. At sulfur vacancy densities of ~1.8×10<sup>14</sup> cm<sup>−2</sup>, I observe defect-mediated photoluminescence (PL) at ~1.72 eV (referred to as LX<sub>D</sub>) at room temperature. The LX<sub>D</sub> emission is attributed to excitons trapped at defect-induced in-gap states and is typically observed only at low temperatures (≤77 K). Time-resolved PL measurements reveal that the lifetime of defect-mediated LX<sub>D</sub> emission is longer than band edge excitons, both at room and low temperatures (~2.44 ns at 8 K). My results provide insight into how excitonic and defect-mediated PL emission in MoS<sub>2</sub> are influenced by sulfur vacancies at room and low temperatures. I also show that the LX<sub>D</sub> peak can be suppressed by annealing the defective MoS<sub>2</sub> in sulfur or selenium vapor, which indicates that it is possible to passivate the vacancies. At annealing temperatures ≥600 °C in selenium vapor, I observed the filling of sulfur vacancies by selenium. I extended the defect generation strategy to monolayer MoS<sub>2</sub> on various dielectric substrates to investigate the influence of dielectric substrates on defect-mediated emission. The LX<sub>D</sub> emission after annealing was observed on SiO<sub>2</sub> and hBN, but not on HfO<sub>2</sub>. When the MoS<sub>2</sub> is first annealed on SiO<sub>2</sub> and then transferred onto HfO<sub>2</sub>, the LX<sub>D</sub> emission is present on untreated HfO<sub>2</sub>, but not on annealed HfO<sub>2</sub>. These results suggest that surface states in dielectric substrates can influence the defect-mediated emission.

Degree

thesis:*
Name dc:type.qualificationname
Doctor of Philosophy (PhD)
Level dc:type.qualificationlevel
Doctoral
Grantor dc:publisher.institution
University of Cambridge
Year dc:date.issued
2024

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Zhu, Yiru
Advisor dc:contributor.advisor
  • Chhowalla, Manish

Subjects

dc:subject × 3

Rights

dc:rights
Language dc:language
eng

Identifiers

dc:identifier.*
DOI dc:identifier.doi
https://doi.org/10.17863/CAM.112297
OAI identifier oai:identifier
oai:www.repository.cam.ac.uk:1810/374109

Chain of custody

source
Harvested from
Cambridge University
Base URL
api.repository.cam.ac.uk/server/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Zhu, Yiru. Photoluminescence from Defects in Two-Dimensional Transition Metal Dichalcogenides. Doctoral thesis, University of Cambridge, 2024. https://doi.org/10.17863/CAM.112297