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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 565 for “"Photoluminescence"”.
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Photoluminescence From Ion Implanted Silicon
Made available in DSpace on 2014-12-10T19:07:24Z (GMT). No. of bitstreams: 1 7511693.pdf: 3187391 bytes, checksum: 645fd023597be72bc038859e4add8fe9 (MD5) Previous issue date: 1974
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Photoluminescence study of cadmium zinc telluride
… xTe crystals with 0 ≤ x ≤ 0.14 using photoluminescence (PL) spectroscopy in the temperature range from 5 K to 300 K with the purpose of: (1) identifying various radiative transitions that are signatures of various point defects in bulk CdZnTe, (2) determining the zinc concentration in …
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Chemiluminescence and photoluminescence of ruthenium chelates.
Massachusetts Institute of Technology. Dept. of Chemistry. Thesis. 1968. Ph.D.
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Optical characterization of ZnSe by photoluminescence
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
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Photoluminescence From Irradiation-Induced Defects in Silicon
Made available in DSpace on 2014-12-10T19:07:20Z (GMT). No. of bitstreams: 1 7500387.pdf: 6075878 bytes, checksum: 2d0b1b65b82e1f881b7cf3cb33cdbea4 (MD5) Previous issue date: 1974
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The Effect of Ambient on Photoluminescence from GaN
The effect of ambient on photoluminescence (PL) from GaN was studied. We found that the PL intensity in vacuum was nearly four times higher than in air. The PL intensity also increased after etching the sample in Aqua Regia and BOE to remove the native oxide layer. After etching, the PL intensity …
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Fiber-taper collected photoluminescence characterization of diamond microdisks
A key architectural element of future quantum photonic networks is an efficient light-matter interface to connect electronic and photonic qubit systems. Nanophotonic resonators can be fabricated on-chip to provide such interfaces for atomic-like defect centers in diamond, which are leading qubit …
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Applications of Spectrally-Resolved Photoluminescence in Silicon Photovoltaics
… is devoted to measuring and interpreting the photoluminescence spectra emitted from different structures in crystalline silicon wafers and solar cells. Based on the knowledge accumulated, it also establishes a variety of applications of photoluminescence spectroscopy in silicon photovoltaics. …
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Applications of Spectrally-Resolved Photoluminescence in Silicon Photovoltaics
… is devoted to measuring and interpreting the photoluminescence spectra emitted from different structures in crystalline silicon wafers and solar cells. Based on the knowledge accumulated, it also establishes a variety of applications of photoluminescence spectroscopy in silicon photovoltaics. …
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Photoluminescence Study of Defects in Mercury Cadmium Telluride
Submitted by Meng Tao (mengtao2@illinois.edu) on 2012-10-12T20:59:11Z No. of bitstreams: 1 Furstenberg_Robert.pdf: 3021685 bytes, checksum: 9b448a1e45eb387f0bf81d018a5a9ff9 (MD5)
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Electric field quenching of single-walled carbon nanotube photoluminescence
The effect of an electric field on the photoluminescence of single-walled carbon nanotubes was investigated. Individual SWNTs embedded in polymeric film were deposited on microscope slides with electrodes. The fluorescence intensity and spectra of single semiconducting SWNTs were acquired. When …
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Photoluminescence and depth profiling studies in gallium arsenide phosphide
Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-17T16:08:46Z No. of bitstreams: 1 1980_yu.pdf: 4746427 bytes, checksum: 304b1d86cf5353e9342c44565e1ced55 (MD5)
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Photoluminescence from Defects in Two-Dimensional Transition Metal Dichalcogenides
… cm<sup>−2</sup>, I observe defect-mediated photoluminescence (PL) at ~1.72 eV (referred to as LX<sub>D</sub>) at room temperature. The LX<sub>D</sub> emission is attributed to excitons trapped at defect-induced in-gap states and is typically observed only at low temperatures (≤77 K). …
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Quantitative photoluminescence studies in a-Si:H/c-Si solar cells
… cells by simulated and quantitatively measured photoluminescence (PL). Different passivation layers on identical (p)c-Si substrates are compared in terms of splitting of quasi-Fermi levels EFn-EFp derived from PL, which gives the maximum achievable Voc. Effective lifetime Tau eff,pl and its …
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Auger-mediated processes and photoluminescence in group iv semiconductor nanostructures
… Ge, and SiGe however, have shown relatively high photoluminescence (PL) quantum efficiency (QE) at low carrier concentrations. At higher carrier concentrations, the PL QE of these nanostructures is drastically reduced due to the onset of a fast non-radiative process attributed to Auger …
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Photoluminescence in rare earth activated oxides and II-VI chalcogenides
This thesis is concerned with the luminescent properties ·of rare earth doped oxides and the IT-VI chalcogenide CaCdS. Both materials are luminescent by very different mechanisms. Luminescence from CaCdS is due to transitions between the conduction and valence band. Emission spectra were found to …
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Photoluminescence Measurement on Low-temperature Metal Modulation Epitaxy Grown GaN
<p>A low-temperature photoluminescence (PL) study was conducted on low-temperature metal modulation epitaxy (MME) grown GaN. By comparing the PL signal from high temperature grown GaN buffer layers, and MME grown cap layers on top of the buffer layers, it was found that MME grown GaN cap has a …
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Quenching of porous silicon photoluminescence by deposition of metal adsorbates
… with UV, samples exhibit a bright orange photoluminescence with a quantum efficiency of order a few percent. Porous silicon is characterized as a very complex network of interconnecting pores which range in size from 1 nm to 100 nm. It has a surface area of order 500 m$\sp2$/cm$\sp3$. The …
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