University of Cambridge
Photoluminescence from Defects in Two-Dimensional Transition Metal Dichalcogenides
Abstract
dc:description.abstractAtomic defects in monolayer transition metal dichalcogenides (TMDs) such as chalcogen vacancies significantly affect their properties. In this thesis, I provide a reproducible and facile strategy to rationally induce chalcogen vacancies in monolayer MoS<sub>2</sub> by annealing at 600 °C in an argon/hydrogen (95 vol.%/5 vol.%) atmosphere. At sulfur vacancy densities of ~1.8×10<sup>14</sup> cm<sup>−2</sup>, I observe defect-mediated photoluminescence (PL) at ~1.72 eV (referred to as LX<sub>D</sub>) at room temperature. The LX<sub>D</sub> emission is attributed to excitons trapped at defect-induced in-gap states and is typically observed only at low temperatures (≤77 K). Time-resolved PL measurements reveal that the lifetime of defect-mediated LX<sub>D</sub> emission is longer than band edge excitons, both at room and low temperatures (~2.44 ns at 8 K). My results provide insight into how excitonic and defect-mediated PL emission in MoS<sub>2</sub> are influenced by sulfur vacancies at room and low temperatures. I also show that the LX<sub>D</sub> peak can be suppressed by annealing the defective MoS<sub>2</sub> in sulfur or selenium vapor, which indicates that it is possible to passivate the vacancies. At annealing temperatures ≥600 °C in selenium vapor, I observed the filling of sulfur vacancies by selenium. I extended the defect generation strategy to monolayer MoS<sub>2</sub> on various dielectric substrates to investigate the influence of dielectric substrates on defect-mediated emission. The LX<sub>D</sub> emission after annealing was observed on SiO<sub>2</sub> and hBN, but not on HfO<sub>2</sub>. When the MoS<sub>2</sub> is first annealed on SiO<sub>2</sub> and then transferred onto HfO<sub>2</sub>, the LX<sub>D</sub> emission is present on untreated HfO<sub>2</sub>, but not on annealed HfO<sub>2</sub>. These results suggest that surface states in dielectric substrates can influence the defect-mediated emission.
Degree
thesis:*- Name dc:type.qualificationname
- Doctor of Philosophy (PhD)
- Level dc:type.qualificationlevel
- Doctoral
- Grantor dc:publisher.institution
- University of Cambridge
- Year dc:date.issued
- 2024
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Zhu, Yiru
- Advisor dc:contributor.advisor
-
- Chhowalla, Manish
Subjects
dc:subject × 3Rights
dc:rightsIdentifiers
dc:identifier.*- DOI dc:identifier.doi
- https://doi.org/10.17863/CAM.112297
- OAI identifier oai:identifier
- oai:www.repository.cam.ac.uk:1810/374109