Quantum Dots In Two-Dimensional Tungsten Diselenide

<p>This work focuses on the investigation of single and double quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe_2) as a means to evaluate the valley degree of freedom as a potential qubit and ambipolar tungsten diselenide monolayers as single photon sources. Gate-defined quantum dots in monolayer and bilayer WSe_2 were fabricated and characterized. Single dot devices are gated from above and below the WSe_2 to accumulate a hole gas. Temperature dependence of Coulomb-blockade peak height is consistent with single-level transport. Excited-state transport in the quantum dot is shown for both monolayer and bilayer devices. Magnetic field dependence of the excited states in the bilayer devices provides a lower bound for g factors. Ambipolar monolayer WSe_2 is integrated into a double dot P-N junction device. Design considerations for double dot devices are discussed. Early measurements of double dot devices show features in the current possibly consistent with transport through double dots.</p>

Name thesis:degree_name

Doctor of Philosophy in Physics (PhD)

Level thesis:degree_level

Dissertation

Year dc:date.available

2022

Author dc:creator

• Stacy, Jeb Allen Michael

Advisor dc:contributor.advisor

• Churchill, Hugh O.H.

Contributors dc:contributor

• Hu, Jin
• Barraza-Lopez, Salvador

• Quantum Dots
• TMDs
• Transistion Metal Dichalcogenides
• Tungsten Diselenide
• WSe2
• Atomic, Molecular and Optical Physics
• Engineering Physics
• Quantum Physics

Repository record dc:identifier

https://scholarworks.uark.edu/etd/4599

OAI identifier oai:identifier

oai:scholarworks.uark.edu:etd-6149