This work focuses on the investigation of single and double quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe_2) as a means to evaluate the valley degree of freedom as a potential qubit and ambipolar tungsten diselenide monolayers as single photon sources. Gate-defined quantum dots in monolayer and bilayer WSe_2 were fabricated and characterized. Single dot devices are gated from above and below the WSe_2 to accumulate a hole gas. Temperature dependence of Coulomb-blockade peak height is consistent with single-level transport. Excited-state transport in the quantum dot is shown for both monolayer and bilayer devices. Magnetic field dependence of the excited states in the bilayer devices provides a lower bound for g factors. Ambipolar monolayer WSe_2 is integrated into a double dot P-N junction device. Design considerations for double dot devices are discussed. Early measurements of double dot devices show features in the current possibly consistent with transport through double dots.
","abstract_html":"<p>This work focuses on the investigation of single and double quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe_2) as a means to evaluate the valley degree of freedom as a potential qubit and ambipolar tungsten diselenide monolayers as single photon sources. Gate-defined quantum dots in monolayer and bilayer WSe_2 were fabricated and characterized. Single dot devices are gated from above and below the WSe_2 to accumulate a hole gas. Temperature dependence of Coulomb-blockade peak height is consistent with single-level transport. Excited-state transport in the quantum dot is shown for both monolayer and bilayer devices. Magnetic field dependence of the excited states in the bilayer devices provides a lower bound for g factors. Ambipolar monolayer WSe_2 is integrated into a double dot P-N junction device. Design considerations for double dot devices are discussed. Early measurements of double dot devices show features in the current possibly consistent with transport through double dots.</p>","abstract_has_math":false,"creators":["Stacy, Jeb Allen Michael"],"institution":null,"degree_name":"Doctor of Philosophy in Physics (PhD)","degree_level":"Dissertation","degree_discipline":null,"degree_department":null,"school":null,"contributors":["Hu, Jin","Barraza-Lopez, Salvador"],"advisors":["Churchill, Hugh O.H."],"committee_chairs":[],"committee_members":[],"year":2022,"date_issued":"2022-08-01T07:00:00Z","date_published":"2022-08-01T07:00:00Z","updated_at":"2026-07-24T00:59:32Z","subjects":["Quantum Dots","TMDs","Transistion Metal Dichalcogenides","Tungsten Diselenide","WSe2","Atomic, Molecular and Optical Physics","Engineering Physics","Quantum Physics"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://scholarworks.uark.edu/etd/4599","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Hu, Jin","Barraza-Lopez, Salvador"]},{"key":"dc:contributor.advisor","label":"Advisor","values":["Churchill, Hugh O.H."]},{"key":"dc:creator","label":"Author","values":["Stacy, Jeb Allen Michael"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2022"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2022-11-11T08:00:00Z"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Doctor of Philosophy in Physics (PhD)"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Quantum Dots","TMDs","Transistion Metal Dichalcogenides","Tungsten Diselenide","WSe2","Atomic, Molecular and Optical Physics","Engineering Physics","Quantum Physics"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://scholarworks.uark.edu/etd/4599"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["This work focuses on the investigation of single and double quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe_2) as a means to evaluate the valley degree of freedom as a potential qubit and ambipolar tungsten diselenide monolayers as single photon sources. Gate-defined quantum dots in monolayer and bilayer WSe_2 were fabricated and characterized. Single dot devices are gated from above and below the WSe_2 to accumulate a hole gas. Temperature dependence of Coulomb-blockade peak height is consistent with single-level transport. Excited-state transport in the quantum dot is shown for both monolayer and bilayer devices. Magnetic field dependence of the excited states in the bilayer devices provides a lower bound for g factors. Ambipolar monolayer WSe_2 is integrated into a double dot P-N junction device. Design considerations for double dot devices are discussed. Early measurements of double dot devices show features in the current possibly consistent with transport through double dots.
"]},{"key":"dc:title","label":"Title","values":["Quantum Dots In Two-Dimensional Tungsten Diselenide"]}]}],"canonical_facts":{"dc:contributor":["Hu, Jin","Barraza-Lopez, Salvador"],"dc:contributor.advisor":["Churchill, Hugh O.H."],"dc:creator":["Stacy, Jeb Allen Michael"],"dc:date":["2022"],"dc:date.available":["2022-11-11T08:00:00Z"],"dc:description.abstract":["This work focuses on the investigation of single and double quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe_2) as a means to evaluate the valley degree of freedom as a potential qubit and ambipolar tungsten diselenide monolayers as single photon sources. Gate-defined quantum dots in monolayer and bilayer WSe_2 were fabricated and characterized. Single dot devices are gated from above and below the WSe_2 to accumulate a hole gas. Temperature dependence of Coulomb-blockade peak height is consistent with single-level transport. Excited-state transport in the quantum dot is shown for both monolayer and bilayer devices. Magnetic field dependence of the excited states in the bilayer devices provides a lower bound for g factors. Ambipolar monolayer WSe_2 is integrated into a double dot P-N junction device. Design considerations for double dot devices are discussed. Early measurements of double dot devices show features in the current possibly consistent with transport through double dots.
"],"dc:identifier":["https://scholarworks.uark.edu/etd/4599"],"dc:subject":["Quantum Dots","TMDs","Transistion Metal Dichalcogenides","Tungsten Diselenide","WSe2","Atomic, Molecular and Optical Physics","Engineering Physics","Quantum Physics"],"dc:title":["Quantum Dots In Two-Dimensional Tungsten Diselenide"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Doctor of Philosophy in Physics (PhD)"]},"updated_at":"2026-07-24T00:59:32Z"}