Comparative Study of Power Semiconductor Devices in a Multilevel Cascaded H-Bridge Inverter

<p>This thesis compares the performance of a nine-level transformerless cascaded H-bridge (CHB) inverter with integrated battery energy storage system (BESS) using SiC power MOSFETs and Si IGBTs. Two crucial performance drivers for inverter applications are power loss and efficiency. Both of these are investigated in this thesis. Power devices with similar voltage and current ratings are used in the same inverter topology, and the performance of each device is analyzed with respect to switching frequency and operating temperature. The loss measurements and characteristics within the inverter are discussed. The Saber® simulation software was used for the comparisons. The power MOSFET and IGBT modeling tools in Saber® were extensively utilized to create the models of the power devices used in the simulations. The inverter system is also analyzed using Saber-Simulink cosimulation method to feed control signals from Simulink into Saber. The results in this investigation show better performances using a SiC MOSFET-based grid-connected BESS inverter with a better return of investment.</p>

Name thesis:degree_name

Master of Science in Electrical Engineering (MSEE)

Level thesis:degree_level

Thesis

Year dc:date.available

2018

Author dc:creator

• Mordi, Kenneth

Advisor dc:contributor.advisor

• Mantooth, H. Alan

Contributors dc:contributor

• Zhao, Yue
• Luo, Fang

• Converters
• BESS
• power loss
• efficiency
• Saber
• inverters
• Electro-Mechanical Systems
• Electronic Devices and Semiconductor Manufacturing
• Engineering Mechanics
• Mechanics of Materials
• Power and Energy
• Semiconductor and Optical Materials

Repository record dc:identifier

https://scholarworks.uark.edu/etd/3118

OAI identifier oai:identifier

oai:scholarworks.uark.edu:etd-4668