This thesis compares the performance of a nine-level transformerless cascaded H-bridge (CHB) inverter with integrated battery energy storage system (BESS) using SiC power MOSFETs and Si IGBTs. Two crucial performance drivers for inverter applications are power loss and efficiency. Both of these are investigated in this thesis. Power devices with similar voltage and current ratings are used in the same inverter topology, and the performance of each device is analyzed with respect to switching frequency and operating temperature. The loss measurements and characteristics within the inverter are discussed. The Saber® simulation software was used for the comparisons. The power MOSFET and IGBT modeling tools in Saber® were extensively utilized to create the models of the power devices used in the simulations. The inverter system is also analyzed using Saber-Simulink cosimulation method to feed control signals from Simulink into Saber. The results in this investigation show better performances using a SiC MOSFET-based grid-connected BESS inverter with a better return of investment.
","abstract_html":"<p>This thesis compares the performance of a nine-level transformerless cascaded H-bridge (CHB) inverter with integrated battery energy storage system (BESS) using SiC power MOSFETs and Si IGBTs. Two crucial performance drivers for inverter applications are power loss and efficiency. Both of these are investigated in this thesis. Power devices with similar voltage and current ratings are used in the same inverter topology, and the performance of each device is analyzed with respect to switching frequency and operating temperature. The loss measurements and characteristics within the inverter are discussed. The Saber® simulation software was used for the comparisons. The power MOSFET and IGBT modeling tools in Saber® were extensively utilized to create the models of the power devices used in the simulations. The inverter system is also analyzed using Saber-Simulink cosimulation method to feed control signals from Simulink into Saber. The results in this investigation show better performances using a SiC MOSFET-based grid-connected BESS inverter with a better return of investment.</p>","abstract_has_math":false,"creators":["Mordi, Kenneth"],"institution":null,"degree_name":"Master of Science in Electrical Engineering (MSEE)","degree_level":"Thesis","degree_discipline":null,"degree_department":null,"school":null,"contributors":["Zhao, Yue","Luo, Fang"],"advisors":["Mantooth, H. Alan"],"committee_chairs":[],"committee_members":[],"year":2018,"date_issued":"2018-12-01T08:00:00Z","date_published":"2018-12-01T08:00:00Z","updated_at":"2026-07-24T00:59:08Z","subjects":["Converters","BESS","power loss","efficiency","Saber","inverters","Electro-Mechanical Systems","Electronic Devices and Semiconductor Manufacturing","Engineering Mechanics","Mechanics of Materials","Power and Energy","Semiconductor and Optical Materials"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://scholarworks.uark.edu/etd/3118","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Zhao, Yue","Luo, Fang"]},{"key":"dc:contributor.advisor","label":"Advisor","values":["Mantooth, H. Alan"]},{"key":"dc:creator","label":"Author","values":["Mordi, Kenneth"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2018"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2019-02-08T08:00:00Z"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science in Electrical Engineering (MSEE)"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Converters","BESS","power loss","efficiency","Saber","inverters","Electro-Mechanical Systems","Electronic Devices and Semiconductor Manufacturing","Engineering Mechanics","Mechanics of Materials","Power and Energy","Semiconductor and Optical Materials"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://scholarworks.uark.edu/etd/3118"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["This thesis compares the performance of a nine-level transformerless cascaded H-bridge (CHB) inverter with integrated battery energy storage system (BESS) using SiC power MOSFETs and Si IGBTs. Two crucial performance drivers for inverter applications are power loss and efficiency. Both of these are investigated in this thesis. Power devices with similar voltage and current ratings are used in the same inverter topology, and the performance of each device is analyzed with respect to switching frequency and operating temperature. The loss measurements and characteristics within the inverter are discussed. The Saber® simulation software was used for the comparisons. The power MOSFET and IGBT modeling tools in Saber® were extensively utilized to create the models of the power devices used in the simulations. The inverter system is also analyzed using Saber-Simulink cosimulation method to feed control signals from Simulink into Saber. The results in this investigation show better performances using a SiC MOSFET-based grid-connected BESS inverter with a better return of investment.
"]},{"key":"dc:title","label":"Title","values":["Comparative Study of Power Semiconductor Devices in a Multilevel Cascaded H-Bridge Inverter"]}]}],"canonical_facts":{"dc:contributor":["Zhao, Yue","Luo, Fang"],"dc:contributor.advisor":["Mantooth, H. Alan"],"dc:creator":["Mordi, Kenneth"],"dc:date":["2018"],"dc:date.available":["2019-02-08T08:00:00Z"],"dc:description.abstract":["This thesis compares the performance of a nine-level transformerless cascaded H-bridge (CHB) inverter with integrated battery energy storage system (BESS) using SiC power MOSFETs and Si IGBTs. Two crucial performance drivers for inverter applications are power loss and efficiency. Both of these are investigated in this thesis. Power devices with similar voltage and current ratings are used in the same inverter topology, and the performance of each device is analyzed with respect to switching frequency and operating temperature. The loss measurements and characteristics within the inverter are discussed. The Saber® simulation software was used for the comparisons. The power MOSFET and IGBT modeling tools in Saber® were extensively utilized to create the models of the power devices used in the simulations. The inverter system is also analyzed using Saber-Simulink cosimulation method to feed control signals from Simulink into Saber. The results in this investigation show better performances using a SiC MOSFET-based grid-connected BESS inverter with a better return of investment.
"],"dc:identifier":["https://scholarworks.uark.edu/etd/3118"],"dc:subject":["Converters","BESS","power loss","efficiency","Saber","inverters","Electro-Mechanical Systems","Electronic Devices and Semiconductor Manufacturing","Engineering Mechanics","Mechanics of Materials","Power and Energy","Semiconductor and Optical Materials"],"dc:title":["Comparative Study of Power Semiconductor Devices in a Multilevel Cascaded H-Bridge Inverter"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["Master of Science in Electrical Engineering (MSEE)"]},"updated_at":"2026-07-24T00:59:08Z"}