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University of Arkansas

High Temperature CMOS Silicon Carbide Asynchronous Circuit Design

Abstract

dc:description.abstract

<p>Designing a digital circuit to operate in an extreme temperature range is a challenge with increasing demand for a solution. Large variations in temperature have a distinct impact on electron mobilities causing substantial changes to the threshold voltage of the devices. These physical changes affect the setup and hold times of clocked components, such as D-Flip Flops, of a traditional synchronous digital circuit. Focusing primarily on high temperature circuit operation, this dissertation presents a digital circuit design methodology pairing an asynchronous circuit design paradigm called NULL Convention Logic (NCL) as well as traditional Boolean circuitry with a wide-bandgap semiconductor material, Silicon Carbide (SiC). A total of nineteen circuits have been designed and fabricated. Chip testing results show correct operation for all circuits returned from fabrication, with most performing at or above the targeted temperature of 300°C.</p>

Degree

thesis:*
Name thesis:degree_name
Doctor of Philosophy in Engineering (PhD)
Level thesis:degree_level
Dissertation
Year dc:date.available
2015

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Caley, Landon John
Advisor dc:contributor.advisor
  • Di, Jia
Contributors dc:contributor
  • Mantooth, H. Alan

Subjects

dc:subject × 8

Identifiers

dc:identifier.*
Repository record dc:identifier
https://scholarworks.uark.edu/etd/30
OAI identifier oai:identifier
oai:scholarworks.uark.edu:etd-1029

Chain of custody

source
Harvested from
University of Arkansas
Base URL
scholarworks.uark.edu/do/oai/
Last updated
2026-07-24
Source record
OAI-PMH GetRecord
citation

Caley, Landon John. High Temperature CMOS Silicon Carbide Asynchronous Circuit Design. Dissertation thesis, 2015. https://scholarworks.uark.edu/etd/30