Design of a very high speed dynamic RAM in gallium arsenide for an ATM switch / Michael K. McGeever.

This thesis analyses the design of a Dynamic RAM in gallium arsenide for use as a buffer in an ATM switch. The causes of leakage are investigated and methods to overcome or compensate the leakage are devised, resulting in a memory cell with a large storage time, high speed and low power dissipation. A 14 kbit RAM array is designed and laid out in gallium arsenide. The RAM array is designed to operate over a -25oC to +125oC temperature range using process parameters which vary by up to 2 [sigma] from typical.

Author dc:creator

• McGeever, Michael K.

Language dc:language.iso

en

Handle dc:identifier.uri

http://hdl.handle.net/2440/19075

OAI identifier oai:identifier

oai:digital.library.adelaide.edu.au:2440/19075