{"id":{"repo_id":"adelaide","oai_identifier":"oai:digital.library.adelaide.edu.au:2440/19075"},"canonical_url":"https://search.dev.ndltd.org/etd/adelaide/oai:digital.library.adelaide.edu.au:2440/19075","repository":{"repo_id":"adelaide","name":"University of Adelaide","base_url":"https://digital.library.adelaide.edu.au/server/oai/request"},"display":{"title":"Design of a very high speed dynamic RAM in gallium arsenide for an ATM switch / Michael K. McGeever.","abstract":"This thesis analyses the design of a Dynamic RAM in gallium arsenide for use as a buffer in an ATM switch. The causes of leakage are investigated and methods to overcome or compensate the leakage are devised, resulting in a memory cell with a large storage time, high speed and low power dissipation. A 14 kbit RAM array is designed and laid out in gallium arsenide. The RAM array is designed to operate over a -25oC to +125oC temperature range using process parameters which vary by up to 2 [sigma] from typical.","abstract_html":"This thesis analyses the design of a Dynamic RAM in gallium arsenide for use as a buffer in an ATM switch. The causes of leakage are investigated and methods to overcome or compensate the leakage are devised, resulting in a memory cell with a large storage time, high speed and low power dissipation. A 14 kbit RAM array is designed and laid out in gallium arsenide. The RAM array is designed to operate over a -25oC to +125oC temperature range using process parameters which vary by up to 2 [sigma] from typical.","abstract_has_math":false,"creators":["McGeever, Michael K."],"institution":null,"degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":1995,"date_issued":"1995","date_published":"1995","updated_at":"2026-07-24T00:50:41Z","subjects":[],"languages":["en"],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2440/19075","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["McGeever, Michael K."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.issued","label":"Date","values":["1995"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/2440/19075"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Bibliography: leaves 156-165.","xvi, 174 leaves : ill. ; 30 cm."]},{"key":"dc:description.abstract","label":"Abstract","values":["This thesis analyses the design of a Dynamic RAM in gallium arsenide for use as a buffer in an ATM switch. The causes of leakage are investigated and methods to overcome or compensate the leakage are devised, resulting in a memory cell with a large storage time, high speed and low power dissipation. A 14 kbit RAM array is designed and laid out in gallium arsenide. The RAM array is designed to operate over a -25oC to +125oC temperature range using process parameters which vary by up to 2 [sigma] from typical."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Design of a very high speed dynamic RAM in gallium arsenide for an ATM switch / Michael K. McGeever."]}]}],"canonical_facts":{"dc:creator":["McGeever, Michael K."],"dc:date.issued":["1995"],"dc:description":["Bibliography: leaves 156-165.","xvi, 174 leaves : ill. ; 30 cm."],"dc:description.abstract":["This thesis analyses the design of a Dynamic RAM in gallium arsenide for use as a buffer in an ATM switch. The causes of leakage are investigated and methods to overcome or compensate the leakage are devised, resulting in a memory cell with a large storage time, high speed and low power dissipation. A 14 kbit RAM array is designed and laid out in gallium arsenide. The RAM array is designed to operate over a -25oC to +125oC temperature range using process parameters which vary by up to 2 [sigma] from typical."],"dc:format.mimetype":["application/pdf"],"dc:identifier.uri":["http://hdl.handle.net/2440/19075"],"dc:language.iso":["en"],"dc:title":["Design of a very high speed dynamic RAM in gallium arsenide for an ATM switch / Michael K. McGeever."],"dc:type":["Thesis"]},"updated_at":"2026-07-24T00:50:41Z"}