Ein Multi-Phasen-Feld-Modell für facettiertes Kristallwachstum

Facetted growth of a multi crystalline material from the melt is investigated using a Multi-Phase-Field Model. The model incorporates static anisotropy of interfacial energy and dynamic anisotropy of interface mobility. Its unique feature is the handling of triple junctions between crystals of different orientations and the melt. In the theoretical derivation of the model the multiphase interaction is decomposed into the interaction of interfaces. This treatment of the multiphase problem in the space of interphases, that in general is of higher dimensionality than the phase space, allows for the explicite setting of time and energy scales, that is impossible in traditional models. The theoretical model is applied to the growth of silicon near thermal equilibrium or in a directional solidification environment. Physical models for interfacial energy and mobility of silicon in dependence of the crystallographic orientation for solid-liquid and solid-solid interfaces are defined. The relevance of the model to the application in silicon crystallization processes is discussed.

Grantor dc:publisher

Publikationsserver der RWTH Aachen University

Year dc:date

2000

Author dc:creator

• Steinbach, Ingo

Contributors dc:contributor

• Sahm, Peter R.

• info:eu-repo/classification/ddc/550
• Geowissenschaften
• Silicium
• Polykristall
• Kristallwachstum

Statement dc:rights

• info:eu-repo/semantics/openAccess

Language dc:language

ger

Identifier

https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-118453%22

OAI record oai:identifier

https://publications.rwth-aachen.de/oai2d?verb=GetRecord&metadataPrefix=oai_dc&identifier=oai%3Apublications.rwth-aachen.de%3A56340