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Publikationsserver der RWTH Aachen University

Development of GaAs pixel detectors

Abstract

dc:description

Progress in elementary particle physics is closely related to the technological efforts in the development of particle colliders and detection systems. In 2005 the Large Hadron Collider will start producing pp-collisions at a centre of mass energy of 14TeV and a luminosity up to 1034cm-2s-1. The experimental programme will be dominated by searches for new particles and extended tests of the standard model of elementary particle physics. The high luminosity as well as the high particle multiplicity and the small time interval between successive bunches place demanding requirements on the two general purpose detectors: fast signal formation and readout, a high density of channels and radiation hardness of sensors and electronics are essential. Semiconductor pixel detectors, installed closest to the beam pipe in the innermost part of the tracking systems, must cope with these constrains. This work concentrates on the applicability of pixel detectors made of Gallium Arsenide for the installation into the Compact Muon Spectrometer (CMS) experiment. An introduction containing a brief description of the physics at the LHC and of the CMS pixel detector is given first. In chapters 2 and 3 the working principles and the processing of particle detectors made of semiinsulating GaAs are explained. For the hybrid GaAs pixel detectors the bump-bonding of the sensors to the electronics had to be developed. The principle of this technology and its optimization is described in chapter 4. In order to investigate the influence of the bump-bonding process on the operation of the pixel detector, measurements of process monitor diodes and of bump-bonded sensors have been performed. These measurements as well as yield tests of the bump-bonds are presented in chapter 5. The applicability of GaAs pixel detectors for precise tracking measurements of high energetic particles has been examined in a beam test. A description of the setup and the results obtained is given in chapter 6. Since this beam test was performed using a non hybrid GaAs pixel detector, further investigations on the properties of the hybrid detector modules have to be performed. In chapter 7 a description of the AC30 frontend chip is given. In chapter 8 the properties of the module consisting of a GaAs pixel detector and the AC30 readout chip are studied. Finally the readout of the bump-bonded GaAs pixel detector bump bonded to the AC30 chip is tested using a radioactive source.

Degree

thesis:*
Grantor dc:publisher
Publikationsserver der RWTH Aachen University
Year dc:date
2000

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Breibach, Jörg
Contributors dc:contributor
  • Lübelsmeyer, Klaus

Subjects

dc:subject × 5

Rights

dc:rights
Statement dc:rights
  • info:eu-repo/semantics/openAccess
Language dc:language
eng

Identifiers

dc:identifier.*

Chain of custody

source
Harvested from
RWTH Aachen University
Base URL
publications.rwth-aachen.de/oai2d
Last updated
2026-07-30
Source record
OAI-PMH GetRecord
citation

Breibach, Jörg. Development of GaAs pixel detectors. Publikationsserver der RWTH Aachen University, 2000. https://publications.rwth-aachen.de/record/56137