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Showing 1 to 13 of 13 for “"Galliumarsenid"”.
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Untersuchung von Ladungstransfermechanismen an Galliumarsenid- und Indiumphosphid-Elektrolyt-Grenzflächen mittels Impedanz- und phasensensitiver Photostrom-Spektroskopie
Im Rahmen dieser Arbeit wurden verschiedene Halbleiter-Elektrolyt-Systeme auf ihre Kinetik beim Ladungstransfer untersucht. An den Kontakten von GaAs, InP und GaInP mit Ferrocen oder Cobaltocen in Acetonitril wurden dabei Elektrochemische Impendanzspektren (EIS) und Intensitätsmodulierte …
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Development of GaAs pixel detectors
Progress in elementary particle physics is closely related to the technological efforts in the development of particle colliders and detection systems. In 2005 the Large Hadron Collider will start producing pp-collisions at a centre of mass energy of 14TeV and a luminosity up to 1034cm-2s-1. The …
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Phasenkohärenter Transport und Spin-Bahn-Wechselwirkung in III/V-Halbleiternanodrähten
Semiconductor nanowires fabricated by a bottom-up approach are not only interesting for the realization of future nanoscaled devices but also appear to be very attractive model systems to tackle fundamental questions concerning the transport in strongly confined systems. In order to avoid the …
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Beitrag zur Prozeßchemie der GaAs-Einkristallsynthese
Beside Silicon Gallium Arsenide (GaAs) is the most important semiconductor. The high potential of this material is connected with the fast development of optoelectronic devices in our days. For future applications an increased scientific understanding of the growth of GaAs single crystal is …
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Optische Dreiwellenspektroskopie an GaAs(001), Si(111) und Pt-Elektrolyt-Grenzflächen
Nonlinear optical spectroscopy was used to investigate GaAs(001), Si(111) and Pt-electrolyte interfaces. GaAs(001): The spectral dispersion of the magnitude of the second-order nonlinear susceptibility |æxyz| of GaAs has been determined by second-harmonic generation (SHG) for two-photon energies …
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Preparation and optimization of low-temperature grown GaAs photomixers
The aim of this work was to design and prepare photomixer devices based on LT GaAs and to optimize them with respect to the maximal output power. Essential part of the photomixer is the MSM photodetector structure. For this reason a major part of the optimization process was done on photodetector …
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Quantentransport in III-V-Halbleiternanosäulen
The goal of this work has been to investigate und understand the electronic transport properties of vertical GaAs/AlAs nanocolumn resonant tunneling diodes (RTDs) and field effect transistors (RTTs) as well as of vertical InAs nanocolumn phase interference diodes. Using new top-down processing …