Grundlagenentwicklung einer Trench-MOS-Technologie auf hexagonalem Siliziumkarbid

Hellmund, Oliver

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Grundlagenentwicklung einer Trench-MOS-Technologie auf hexagonalem Siliziumkarbid

dc:creator Hellmund, Oliver

dc:date2003

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Grantor dc:publisher: Shaker
Year dc:date: 2003

Author and committee

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Author dc:creator: Hellmund, Oliver
Contributors dc:contributor: Kurz, Heinrich

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Statement dc:rights: info:eu-repo/semantics/closedAccess
Language dc:language: ger

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Identifier: https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-115026%22
OAI record oai:identifier: https://publications.rwth-aachen.de/oai2d?verb=GetRecord&metadataPrefix=oai_dc&identifier=oai%3Apublications.rwth-aachen.de%3A52831

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Harvested from: RWTH Aachen University
Base URL: publications.rwth-aachen.de/oai2d
Last updated: 2026-07-30
Source record: OAI-PMH GetRecord

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aachen
2003

citation

Hellmund, Oliver. Grundlagenentwicklung einer Trench-MOS-Technologie auf hexagonalem Siliziumkarbid. Shaker, 2003. https://publications.rwth-aachen.de/record/52831

Grundlagenentwicklung einer Trench-MOS-Technologie auf hexagonalem Siliziumkarbid

Degree

Author and committee

Rights

Identifiers

Chain of custody

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